Logic circuit and method of logic circuit design

ABSTRACT

A complementary logic circuit contains first and second logic inputs, first and second dedicated logic terminals, a high-voltage terminal configured for connection to a high constant voltage, a low-voltage terminal configured for connection to a low constant voltage, a p-type transistor and an n-type transistor. The p-type transistor and n-type transistor each have a respective outer diffusion connection, gate connection, inner diffusion connection, and bulk connection. The first and second dedicated logic terminals are connected respectively to the outer diffusion connection of the p-type transistor and the outer diffusion connection of the n-type transistor. The inner diffusion connection of the p-type transistor and the inner diffusion connection of the n-type transistor are connected together to form a common diffusion logic terminal. The high-voltage terminal and the low-voltage terminal are connected respectively to the bulk connection of the p-type transistor and the bulk connection of the n-type transistor.

RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No. 13/177,582, filed on Jul. 7, 2011, which is a divisional of U.S. patent application Ser. No. 11/884,374 filed on May 24, 2010, now U.S. Pat. No. 8,004,316, which is a National Phase of PCT Patent Application No. PCT/IL2006/000129 having International Filing Date of Feb. 1, 2006, which claims the benefit of priority of U.S. Provisional Patent Application No. 60/653,115 filed on Feb. 16, 2005. The contents of the above Applications are all incorporated herein by reference.

FIELD AND BACKGROUND OF THE INVENTION

The present invention relates to a logic circuit design and, more particularly, to a logic circuit design for combinatorial and asynchronous logic circuits.

A large body of research has been performed to develop and improve traditional Complementary Metal Oxide Semiconductor (CMOS) techniques for the production of integrated circuits (ICs). The object of this research is to develop a faster, lower power, and reduced area alternative to standard CMOS logic circuits (see A. P. Chandrakasan, S. Sheng, R. W. Brodersen, “Low-Power CMOS Digital Design”, IEEE Journal of Solid-State Circuits, vol. 27, no. 4, pp. 473-484, April 1992, and in A. P. Chandrakasan, R. W. Brodersen, “Minimizing Power Consumption in Digital CMOS Circuits”, Proceedings of the IEEE, vol. 83, no. 4, pp. 498-523, April 1995.) This research has resulted in the development of many logic design techniques during the last two decades. One popular alternative to CMOS is pass-transistor logic (PTL).

Formal methods for deriving pass-transistor logic are known for Negative-channel Metal Oxide Semiconductor (NMOS) transistors. The logic circuits resulting from these known methods yield an NMOS PTL logic circuit having a set of control signals applied to the gates of NMOS transistors, and a set of data signals applied to the sources of the n-transistors. Many PTL circuit implementations have been proposed in the literature (see also W. Al-Assadi, A. P. Jayasumana and Y. K. Malaiya, “Pass-transistor logic design”, International Journal of Electronics, 1991, vol. 70, no. 4, pp. 739-749, K. Yano, Y. Sasaki, K. Rikino, K. Seki. “Top-Down Pass-Transistor Logic Design”, IEEE Journal of Solid-State Circuits, vol. 31, no. 6, pp. 792-803, June 1996, R. Zimmermann, W. Fichtner, “Low-Power Logic Styles: CMOS Versus Pass-Transistor Logic”, IEEE Journal of Solid-State Circuits, vol. 32, no. 7, pp. 1079-1090, June 1997, and K. Bernstein, L. M. Carrig, C. M. Durham and P. A. Hansen, “High Speed CMOS Design Styles”, Kluwer Academic Press, 1998, and K. Bernstein, L. M. Carrig, C. M. Durham and P. A. Hansen, “High Speed CMOS Design Styles”, Kluwer Academic Press, 1998).

Some of the main advantages of PTL over standard CMOS design are: high speed due to the small node capacitances; low power dissipation as a result of the reduced number of transistors; and lower interconnection effects due to a small area.

Most PTL implementations, however, have two basic problems. First, the threshold drop across the single-channel pass transistors results in reduced current drive and hence slower operation at reduced supply voltages. This drop is particularly important for low power design since it is desirable to operate at the lowest possible voltage level. Second, since the input voltage for a high logic level at the regenerative inverters is not V_(DD), the PMOS device in the inverter is not fully turned off, and hence direct-path static power dissipation can be significant.

There are many PTL techniques that attempt to solve the problems mentioned above. Some of them are: Transmission Gate CMOS (TG), Complementary Pass-transistor Logic (CPL), and Double Pass-transistor Logic (DPL). TG uses transmission gate logic to realize complex logic functions using a small number of complementary transistors. TG solves the problem of low logic level swing by using PMOS as well as NMOS transistors. CPL features complementary inputs/outputs using NMOS pass-transistor logic with CMOS output inverters. CPL's most important feature is the small stack height and the internal node low swing, which contribute to lowering the power consumption. The CPL technique suffers from static power consumption due to the low swing at the gates of the output inverters. To lower the power consumption of CPL circuits, latched complementary pass-transistor logic (LCPL) and swing restored pass-transistor logic (SRPL) circuit styles are used. These styles contain PMOS restoration transistors or cross-coupled inverters respectively. DPL uses complementary transistors to keep full swing operation and reduce the DC power consumption, eliminating the need for restoration circuitry. One disadvantage of DPL is the large area required by the presence of PMOS transistors.

An additional problem of existing PTL is the top-down logic design complexity, which prevents the pass-transistors from capturing a major role in real logic large-scale integration technology (LSI). One of the main reasons for this is that no simple and universal cell library is available for PTL based design. Not all variations of input values to a basic PTL cell produce well-defined logic values. This creates difficulties in the development of automatic design systems for PTL logic, and in the verification of PTL logic circuit performance.

Asynchronous logic design has been established as a competitive alternative to synchronous circuits thanks to the potential for high-speed, low-power, reduced electromagnetic interference, and timing modularity (see J. Sparsø and S. Furber (eds.), Principles of asynchronous circuit design—A systems perspective, Kluwer Academic Publishers, 2001). Asynchronous logic has been developed in the last decade to deal with the challenges posed by the progress of very large-scale integration (VLSI) technologies, together with the increasing number of gates on chip, high density, and GHz operation frequencies. These problems are expected to appear in future high-performance technologies operating at the 10 GHz barrier, due to the increased influence of interconnect on signal delay, uncertainty in the delay of a given gate, and on-chip parameter variations. These factors create difficulties in the design of fast digital systems controlled by a single general clock, due to considerations of delay skew between distant logic blocks, as well as the complexity of design of structures controlled by multiple clocks.

Asynchronous design provides digital systems based on self-timed circuits, which demand no control of a general clock, along with fast communication protocols in which speed depends only on the self delay of the logic gates. The absence of a general clock contributes to low power operation, by eliminating the concentrated power consumption of certain chip areas where numerous transactions occur with arrival of each clock signal.

However, these desirable characteristics usually come at a cost of either silicon area, or speed, or power, and cannot be achieved all at once. Furthermore, asynchronous circuits are typically more complicated than their synchronous counterparts.

In U.S. patent application Ser. No. 10/648,474 Morgenshtein et al. present a fast and versatile logic circuit, denoted GDI, with reduced area and power requirements, and capable of implementing a wide variety of logic functions. The GDI logic technique is based upon a basic GDI logic cell, which is shown in FIG. 1 and described in detail below. However, the generally applicability of the previously proposed GDI logic cell for logic circuit design is limited to a narrow range of CMOS technologies due to bulk effects, as discussed below. Many GDI cell topologies cannot be implemented in standard p-well or n-well CMOS technology.

Reference is now made to FIG. 1, which is a simplified block diagram of a logic circuit. The logic circuit, which uses a previously proposed GDI design, is based upon two complementary transistor networks, which connect to the previously proposed GDI circuit logic inputs and outputs, and implement the desired logic function. The relationship between the structures of the two transistor networks and the overall function of the previously proposed GDI circuit is discussed below, for the general case and for specific transistor network configurations.

Logic circuit 100 contains P logic block 110, N logic block 120, first and second logic inputs, 130 and 140, and three logic terminals: first and second dedicated logic terminals, 150 and 160, and common diffusion logic terminal 170. The first and second dedicated logic terminals, 150 and 160, and the common diffusion logic terminal 170 can each serve as either a logic signal input terminal or a logic signal output terminal, depending upon the specific logic circuit implementation. The examples given below illustrate several logic circuit terminal configurations.

The P logic block 110 contains a network of p-type transistors 180 which are interconnected to implement a given logic function. The P logic block 110 has three logic connections: an outer diffusion connection 181 (at an outer diffusion node of one of the p-type transistors), a gate connection 182 (at the gate of one of the p-type transistors), and an inner diffusion connection 183 (at the second inner diffusion node of one of the p-type transistors). Outer diffusion connection 181 connects to the first dedicated logic terminal 150, and gate terminal 182 connects to the first logic input 130. The N logic block 120 contains a network of n-type transistors 190 which implement the complementary logic function, and is structured similarly to the P logic block 110. The inner diffusion nodes of the P and N logic blocks, 183 and 193, are connected together to form the common diffusion logic terminal 170.

The p-type and n-type transistors may be field effect transistors (FET), CMOS transistors (p-well, n-well, or twin-well), SOI transistors, SOS transistors, or the like. However p-well and n-well CMOS transistors may be used only for a limited number of logic circuit configurations. Note that the customary distinction between the source and drain of the transistor can not be made with the previously proposed GDI structure, since for any given transistor the relative voltages between the transistor diffusion nodes changes depending upon the logic input and output voltages. This is in contrast with the standard complementary CMOS structure in which the source or drain is tied to a constant voltage. Thus, for previously proposed GDI logic circuits one of the two transistor diffusion nodes (not the gate) is arbitrarily selected to serve for the inner diffusion connection, and the other to serve for the outer diffusion connection. Many of the previously proposed GDI cell topologies can be implemented in standard p-well or n-well CMOS technology, due to interference of bulk effects under certain input/output conditions. Previously proposed GDI logic circuits are therefore preferably implemented in either twin-well CMOS or silicon-on-insulator/silicon-on-sapphire (SOI/SOS) technologies, which do not suffer from these limitations.

In the previously proposed GDI logic circuit, the common logic terminals are connected together to form a common logic input 196. Thus a logic signal at the common logic input 196 is applied to both the P and N logic blocks, 110 and 120. In one configuration known as a previously proposed double-gate-input GDI circuit (previously proposed GDI*), the logic input terminals, 130 and 140, are not connected, and each logic block has an independent logic input. The previously proposed GDI* circuit is discussed in greater detail below (see FIG. 8).

A dual-transistor configuration of the previously proposed GDI logic circuit is designated herein as the previously proposed GDI logic cell. Reference is now made to FIG. 2, which is a simplified circuit diagram of a standard previously proposed GDI logic cell. In the standard previously proposed GDI logic cell 200, the p-type and n-type transistor networks each contain a single transistor, 210 and 220 respectively. The previously proposed GDI cell has a common input terminal (G) 230 connected to the gates of both the NMOS and PMOS transistors, a first dedicated logic terminal (P) 240 at the outer diffusion node of the PMOS transistor, and a second dedicated logic terminal (N) 250 at the outer diffusion node of the NMOS transistor 220. The common diffusion logic terminal (D) 260 is connected to the inner diffusion nodes of both transistors. The first and second dedicated logic terminals, 240 and 250, and the common diffusion logic terminal 260 may be used as either input or output ports, depending on the circuit structure. FIG. 2 omits bulk connections, although such connections may be required for some transistor technologies, including CMOS. The circuit diagrams for the previously proposed GDI logic circuits presented below have transistor bulk connections, and are therefore appropriate only for technologies with four-terminal transistors (i.e. transistors having gate, drain, source and bulk terminals), such as twin-well CMOS and SOI. Bulk connections may not be needed for some transistor technologies, such as floating bulk SOI.

Table 1 shows six logic functions which can be implemented with a single previously proposed GDI logic cell. The most general case is the multiplexer (MUX), where logic signal A is applied to the common input 230. Signal A selects one of the dedicated logic terminals, 240 or 250, and the logic cell outputs the selected logic signal at the common diffusion logic terminal 260. Other configurations listed in the table implement OR, AND, and inverter logic gates. The logic cell also implements the F1 function (ĀB) and the F2 function (Ā+B). Both the F1 and F2 functions are complete logic families, which can be used to realize any possible logic function.

TABLE 1 N (1st P (2nd G dedicat.) dedicat.) (Cmn.) D Function Low B A ĀB F1 B High A Ā + B F2 High B A A + B OR B Low A AB AND C B A ĀB + AC MUX Low High A Ā NOT

Many of the logic circuits presented below are based on the F1 and F2 functions. The reasons for this are as follows. First, as mentioned, both F1 and F2 are complete logic families. Additionally, F1 is the only GDI function that can be used for higher level circuit design that can be realized in a standard n-well CMOS process. In the F1 function implementation, the bulks of all NMOS transistors are constantly and equally biased, since the N terminal (first dedicated logic terminal) is tied low for all logic input levels. In the other configurations listed in Table 1 the N terminal is either tied high (OR gate), or varies according to the logic input levels (F2, AND, and MUX). Similarly, F2 can be realized in p-well CMOS. Finally, when the N input is driven at a high logic level and the P input is at low logic level, the diodes between NMOS and PMOS bulks to the logic circuit output are directly polarized, and the two dedicated logic terminals are shorted together. Being driven in such a way causes static power dissipation and an output voltage Vout˜0.5V_(DD). Utilizing the OR, AND and MUX implementations, in standard CMOS with V_(BS)=0 configuration, as building blocks for more complex logic circuits is therefore problematic. The polarization effect can be reduced if the design is performed in floating-bulk SOI technologies, in which case floating-bulk effects have to be considered.

The previously proposed GDI cell 200 differs significantly from the standard CMOS inverter, which it resembles structurally. Dedicated logic inputs 240 and 250 serve as logic signal inputs, not for applying pull-up and pull-down voltages as in the CMOS case. By extending the complementary structure to a three input structure, a much more versatile logic cell is obtained. A simple change of the input configuration of the previously proposed GDI cell 200 corresponds to different Boolean functions. Most of these functions are complex (6-12 transistors) in CMOS, as well as in standard PTL implementations, but require only 2 transistors as a previously proposed GDI logic circuit. Additionally, the bulks of transistors 210 and 220 may be connected to dedicated logic terminals 240 and 250 respectively, so that the transistors 210 and 220 can be arbitrarily biased. This is in contrast with a CMOS inverter, which cannot be biased.

The previously proposed GDI cell structure provides advantages over both CMOS and PTL logic circuits in design complexity, transistor count and power dissipation. An operational analysis of the previously proposed GDI logic cell is now presented, in which previously proposed GDI circuit transient behavior, swing restoration, and switching characteristics are analyzed.

One of the common problems of PTL design methods is the low swing of output signals because of the threshold drop across the single-channel pass transistors. In existing PTL techniques additional buffering circuitry is used to overcome this problem. The following analysis of the low swing performance of the previously proposed GDI cell is based on the F1 function, and can be easily extended for other previously proposed GDI functions. Table 2 presents a full set of logic states and the related functionality modes for the F1 function.

TABLE 2 G P Functionality D 0 0 PMOS Trans Gate V_(Tp) 0 1 CMOS Inverter 1 1 0 NMOS Trans Gate 0 1 1 CMOS Inverter 0

As can be seen from Table 2, G=0, P=0 is the only state where low swing occurs in the output value. In this case the voltage level of F1 is V_(Tp) (instead of the expected 0V), because of the poor high-to-low transition characteristics of PMOS pass-transistors (see W. Al-Assadi, A. P. Jayasumana and Y. K. Malaiya, “Pass-transistor logic design”, International Journal of Electronics, 1991, vol. 70, no. 4, pp. 739-749, contents of which are hereby incorporated by reference). The only case (from amongst all the possible transitions) where the effect occurs is the transition from G=0, P=V_(DD) to G=0, P=0.

Note that in approximately half of the cases (for P=1) the previously proposed GDI cell operates as a regular CMOS inverter, which is widely used as a digital buffer for logic level restoration. In some of these cases, when V_(DD) is high and there is no swing drop from the previous stages, the previously proposed GDI cell functions as an inverter buffer and recovers the voltage swing. Although this creates a self swing-restoration effect in certain cases, the previously proposed GDI logic circuits shown below assume worst-case swing effects, and contain additional circuitry for swing restoration.

The exact transient analysis for basic previously proposed GDI cell, in most cases, is similar to a standard CMOS inverter. CMOS transient analysis is widely presented in the literature. The classic analysis is based on the Shockley model, where the drain current I_(D) is expressed as follows:

$\begin{matrix} {I_{D} = \begin{Bmatrix} {{I_{D\; 0}\left( \frac{W}{L} \right)}^{({{qV}_{GS}/{KT}})}} \\ \left( {V_{GS} \leq {V_{TH}\text{:}\mspace{14mu} {sub}\text{-}{threshold}\mspace{14mu} {region}}} \right. \\ {K\left\{ {{\left( {V_{GS} - V_{TH}} \right)V_{DS}} - {0.5\mspace{11mu} V_{DS}^{2}}} \right\}} \\ \left( {V_{DS} < {V_{GS} - {V_{TH}\text{:}\mspace{14mu} {linear}\mspace{14mu} {region}}}} \right) \\ {0.5\mspace{11mu} {K\left( {V_{GS} - V_{TH}} \right)}^{2}} \\ \left( {V_{DS} \geq {V_{GS} - {V_{TH}\text{:}\mspace{14mu} {saturation}\mspace{14mu} {region}}}} \right) \end{Bmatrix}} & (1) \end{matrix}$

where K is a drivability factor, V_(TH) is a threshold voltage, W is a channel width and L is a channel length.

In contrast with the CMOS inverter analysis (see V. Adler, E. G. Friedman, “Delay and Power Expressions for a CMOS Inverter Driving a Resistive-Capacitive Load”, Analog Integrated Circuits and Signal Processing, 14, 1997, pp. 29-39, contents of which are hereby incorporated by reference), where V_(GS) is used as an input voltage, in most previously proposed GDI circuits the voltage input variable to the Shockley model is V_(DS), the drain-source voltage. The following analysis presents the aspects in which previously proposed GDI differs from CMOS.

Reference is now made to FIG. 3, which shows the previously proposed GDI circuit diagram and transient response when a step signal is supplied to the first dedicated logic terminal 310 of the previously proposed GDI cell 300. The applied step signal causes a response, during which the NMOS transistor 330 passes from the saturation to the sub-threshold region, and a swing drop in output occurs. The transient analysis assumes a fast input transition, so that the linear region is ignored. Analytical expressions that describe the transient response can be derived from (1), for a capacitive load, C_(L) 350, at the output. The capacitive current is:

$\begin{matrix} {I_{C} = {{C\frac{V_{S}}{t}} = I_{D}}} & (2) \end{matrix}$

where C is the output capacitance, V_(S) is the voltage across the capacitance C_(L). I_(C) is the current charging the capacitor, which is equal to I_(D), the drain current through the N-channel device.

The expression for V_(S) as a function of time is:

In the saturation region:

$\begin{matrix} {{C\frac{V_{S}}{t}} = {{0.5\mspace{11mu} {k\left( {V_{GS} - V_{T}} \right)}^{2}} = {0.5\mspace{11mu} {k\left( {V_{DD} - V_{T} - V_{S}} \right)}^{2}}}} & (3) \end{matrix}$

where, in the case of previously proposed GDI cells linked through diffusion inputs, the capacitance C includes both diffusion and well capacitances of the driven cell.

The integral form of (3) is:

$\begin{matrix} {{\int\frac{V_{S}}{0.5\mspace{11mu} {k\left( {V_{DD} - V_{T} - V_{S}} \right)}^{2}}} = {\int\frac{t}{C}}} & (4) \end{matrix}$

The same expression can be written as:

$\begin{matrix} {{{\int\frac{V_{S}}{{aV}_{S}^{2} + {bV}_{S} + c}} = {\int{t}}}{where}} & (5) \\ {{a = \frac{0.5\mspace{11mu} k}{C}},{b = \frac{- {k\left( {V_{DD} - V_{T}} \right)}}{C}},{c = \frac{0.5\mspace{11mu} {k\left( {V_{dd} - V_{T}} \right)}^{2}}{C}}} & (6) \end{matrix}$

a, b and c in (6) are constants of the process or the given circuit. The final expression for the transient response in the saturation region is:

$\begin{matrix} {{t + k_{1}} = {\frac{1}{\sqrt{b^{2} - {4\mspace{11mu} a\; c}}}{\ln\left( \frac{{2\mspace{11mu} {aV}_{s}} + b - \sqrt{b^{2}4\mspace{11mu} a\; c}}{{2{aV}_{s}} + b + \sqrt{b^{2}4\mspace{11mu} a\; c}} \right)}}} & (7) \end{matrix}$

where t is time in saturation region, and k₁ is a constant of integration and is calculated for initial conditions (t=0, V_(S)=0). The solution of (7) is obtained numerically (e.g. in MATLAB) for specific values of a, b, and c.

After entering the sub-threshold region, V_(S) continues rising while the output capacitance is charged by I_(D) according to (1):

In the sub-threshold region:

$\begin{matrix} {{C\frac{V_{S}}{t}} = {{{I_{D\; 0}\left( \frac{W}{L} \right)}^{({{qV}_{GS}/{kT}})}} = {{I_{D\; 0}\left( \frac{W}{L} \right)}\frac{^{({{qV}_{DD}/{kT}})}}{^{({{qV}_{S}/{kT}})}}}}} & (8) \\ {{\int{{V_{S}}{^{({{qV}_{S}/{kT}})} \cdot A}}} = {\int{t}}} & (9) \end{matrix}$

where T is the temperature in degrees Kelvin, k is Boltzmann's constant, q is the charge of an electron, and A is a constant:

$\begin{matrix} {A = \frac{C}{{I_{D\; 0}\left( \frac{W}{L} \right)}^{({{qV}_{DD}/{kT}})}}} & (10) \end{matrix}$

The expression for the response in the sub-threshold region is:

$\begin{matrix} {{t + k_{2}} = {\frac{l^{({{qV}_{s}/{kT}})}}{q/{kT}} \cdot A}} & (11) \\ {k_{2} = {\frac{l^{({{q{\lbrack{V_{DD} - V_{T}}\rbrack}}/{kT}})}}{q/{kT}} \cdot A}} & (12) \end{matrix}$

where k₂ is a constant of integration defined by the initial conditions, A is calculated in (10), and V_(T) is the threshold voltage.

The analysis of propagation delay of a basic previously proposed GDI cell given by equations (2-7) can be refined by taking into account the effect of the diode between the NMOS source and body. This diode is forward biased during the transient (see FIG. 2). By conducting an additional current, the diode contributes to charging the output capacitance C_(L). The diode's current contribution can be calculated as:

$\begin{matrix} {I_{BS} = {I_{0}\left( {l^{({{q{\lbrack{V_{DD} - V_{S}}\rbrack}}/{nkT}})} - 1} \right)}} & (13) \end{matrix}$

where I_(BS) is the diode current, I₀ is the reverse current, and n is a factor between 1 and 2. The I_(BS) current should be added to equation (2) to derive an improved propagation delay, indicating a faster transient operation of previously proposed GDI cell.

The swing restoration performance of previously proposed GDI circuits is calculated taking into account the area (power) and circuit frequency (delay) constraints. The simplest method of swing restoration is to add a buffer stage after every previously proposed GDI cell. The addition of a buffer stage prevents the voltage drop, but requires greater previously proposed GDI circuit area and increases circuit delay and power dissipation, making such a simplified method highly inefficient. Various buffering techniques are presented in the literature.

Given a clocked logic circuit with known T_(cycle) and T_(setup), buffering of cascaded previously proposed GDI cells is optimal if the following effects are taken into consideration:

1. Successive Swing Restoration—When cascading previously proposed GDI cells, each cell contributes a voltage drop in the output, that is equal to V_(drop). Assuming 0.3 V_(DD) as a maximal allowed voltage drop of the whole cascade, the number of linked previously proposed GDI cells between two buffers is limited by:

$\begin{matrix} {N_{1} = \frac{0.3\; V_{DD}}{V_{drop}}} & (14) \end{matrix}$

As shown in FIG. 3, after exiting the saturation area, the value of V_(drop) is equal to V_(TH), and decreases with time as follows, using (9):

$\begin{matrix} {V_{drop} = {{V_{DD} - V_{S}} = {V_{DD} - \frac{\ln \left( \frac{\left( {t + k_{2}} \right) \cdot {q/{kT}}}{A} \right)}{q/{kT}}}}} & (15) \end{matrix}$

Equation (15) applies to the sub-threshold region only, namely for V_(S)<V_(DD).

According to (15), remaining in the sub-threshold region for (t+k₂) assures a significant decrease of V_(drop), and as a result an increase in the number of linked cells, N₁. Successive swing restoration can thus be achieved with fewer buffers. FIG. 4 presents Cadence Spectre simulation results of the response of a previously proposed GDI AND gate to a 0-3.3 V step input, for a gate operating in the sub-threshold region with a V_(DD) of 3.3 V.

Interconnection effects can cause a drop in signal potential level, particularly over long interconnects. Where maintaining signal levels is essential, expression (15) may be extended to take into account the interconnection drop IR (where R is the interconnect resistance and I is the current through the interconnect).

Accordingly, suppose the V_(DD) voltage is applied to the drain input of the NMOS transistor through a long wire. For a wire with given width, W, and length, L, the resistance of the interconnect wire is given by:

$\begin{matrix} {R = {\rho_{square} \cdot \frac{L_{wire}}{W_{wire}}}} & (16) \end{matrix}$

where ρ_(square) is a metal sheet resistance per square. The current flowing through the wire I_(wire) and causing the voltage drop is given by:

$\begin{matrix} {I_{wire} = \frac{V_{DD} - V_{drain}}{R}} & (17) \end{matrix}$

V_(drain) is determined by the equalization between the wire and NMOS transistor currents as follows:

$\begin{matrix} {\frac{V_{DD} - V_{drain}}{R} = {I_{D}\left( V_{drain} \right)}} & (18) \end{matrix}$

where I_(D) (V_(drain)) is found from (1) according to the operation region of the transistor. Equation (18) can be solved numerically, and its contribution to the final voltage drop expression is given by:

V′ _(drop) =V _(drop)+(V _(DD) −V _(drain))(19)

where V_(drop) is given by (15).

Operation in the sub-threshold region increases delay. The above method is therefore primarily suitable for low-frequency design.

Scaling, namely V_(DD) reduction and threshold non-scalability, influences the number of required buffers for previously proposed GDI circuit architecture according to (14). As a result, in order to remain with the same technology and V_(T) when operating with lower supply voltages additional buffers may be required. The direct impact of adding buffers is primarily on circuit area and the number of gates.

Finally, the following points are noted concerning the buffer insertion topology in previously proposed GDI. Buffer insertion need be considered only when linking previously proposed GDI cells through diffusion inputs. No buffers are needed before gate inputs of previously proposed GDI cells. Due to this feature, the “mixed path” topology can be used as an efficient method for buffer insertion. The number of buffers may be reduced by alternately involving diffusion and gate inputs in a given signal path. The circuit designer can trade off between buffer insertion, and delay, area and power consumption, to achieve efficient swing restoration.

2. Impacts of process variation on swing restoration—In every VLSI process there are variations in parameters such as threshold tracking, and I_(DO). The process dependence of V_(TH) and I_(DO) influences the value of V_(drop) and the swing restoration in previously proposed GDI. This effect can be best described by defining a sensitivity of V_(drop) to the mentioned parameter variations as follows:

$\begin{matrix} {{{Current}\mspace{14mu} {sensitivity}\mspace{14mu} {of}\mspace{14mu} {Vdrop}} = \frac{\partial V_{drop}^{\prime}}{\partial I_{D\; 0}}} & (20) \\ {{{Threshold}\mspace{14mu} {sensitivity}\mspace{14mu} {of}\mspace{14mu} {Vdrop}} = \frac{\partial V_{drop}^{\prime}}{\partial V_{TH}}} & (21) \end{matrix}$

where V_(drop) is given by (19).

3. Maximal cascade delay constraint—The signal path in a cascade of previously proposed GDI cells can be represented by a single-branch RC tree. FIG. 5 shows a previously proposed GDI cascade represented as an RC tree, where R, are the effective resistances of the conducting transistors, and Ci are the capacitive loads caused by following devices.

A resistance R_(ii) is defined as the resistance of the path between the input and the output (for an RC tree without side branches). R_(kk) is the resistance between the input and node k. C_(k) is the capacitance at node k.

The following times are defined in order to derive bounds for the delay of the RC tree:

$\begin{matrix} {T_{D} = {\sum\limits_{k}\; {R_{kk}C}}} & (22) \\ {T_{R} = {\left( {\sum\limits_{k}\; {R_{kk}^{2}C_{k}}} \right)/R_{ii}}} & (23) \end{matrix}$

The maximal delay of the RC tree can be derived numerically from the bounds on the time of equations (22) and (23), and is given by the following equation:

t≦T _(D)−T_(R) −T _(D) ln [1−v _(i)(t)]  (24)

The number of stages N₂ in a previously proposed GDI cascade can be found for a maximal total delay time T_(delay), while using the condition:

T _(cycle) −T _(setup) ≦T _(delay)  (25)

Notice that (25) can be checked only after a value for N₂ has been assumed and a suitable RC tree has been built.

In order to obtain satisfactory performance the number of stages between buffers should be limited to satisfy both the successive swing restoration and the maximal delay requirements. The maximal number of stages in cascade between two buffers is therefore the minimal value between N1 (given by (14)) and N2.

A comparison was also made between the switching characteristics of previously proposed GDI vs. CMOS. Due to the complexity of logic functions that can be implemented in previously proposed GDI cell by using only two transistors, the previously proposed GDI cell's switching characteristics were compared to a CMOS gate whose logic function is of the same order of complexity. While the previously proposed GDI cell's structural characteristics are close to a standard CMOS inverter, the gate with equivalent functional complexity in CMOS is a NAND gate. A comparison of switching characteristics was therefore performed between the previously proposed GDI cell and a CMOS NAND gate. The switching behavior of the inverter can be generalized by examining the parasitic capacitances and resistances associated with the inverter. This comparison can be used as a base for delay estimation in early stages of circuit design.

Reference is now made to FIG. 6, which shows the structure of a previously proposed GDI (or prior-art CMOS) inverter 600, along with its equivalent digital model 610. The digital model of the previously proposed GDI inverter consists of three parallel branches between V_(DD) and ground. Two of the branches each consist of two capacitors in series (C_(inn) and C_(inp) for the first branch, and C_(outn) and C_(outp) for the second branch), with an inverter input between C_(inn) and C_(inp). The third branch consists of two resistors (R_(n) and R_(p)) in series, with the inverter output between the two resistors. The propagation delay for an inverter driving a capacitive load is:

t _(PHL) =R _(n) ·C _(tot) =R _(n)·(C _(out) +C _(load))  (26)

where C_(tot) is the total capacitance on the output of the inverter, that is the sum of the output capacitance of the inverter, any capacitance of interconnecting lines, and the input capacitance of the following gate(s).

Reference is now made to FIG. 7 which shows a circuit diagram of a CMOS NAND gate 700, along with its equivalent digital model 710. The NAND gate consists of identical n-channel metal-oxide-semiconductor FETs (MOSFETs), 720.1 to 720.n, connected in series. As shown in R. J. Baker, H. W. Li and D. E. Boyce, “CMOS Circuit Design, Layout, and Simulation”, IEEE Press Series on Microelectronic Systems, pp. 205-242, contents of which are hereby incorporated by reference, the intrinsic switching time of series-connected MOSFETs with an external load capacitance may be estimated by:

$\begin{matrix} {t_{PHL} = {{N \cdot R_{n} \cdot \left( {\frac{C_{out}}{N} + C_{load}} \right)} + {0.35 \cdot R_{n} \cdot {C_{inn}\left( {N - 1} \right)}^{2}}}} & (27) \end{matrix}$

The first term in (27) represents the intrinsic switching time of the series connection of N MOSFETs, while the second term represents the RC delay caused by R_(n) charging C_(inn).

For C_(inn) equal to 3/2·Cox, and assuming two serial n-MOS transistors, the propagation delay of the NAND gate is:

t _(PHL)=1.52·R _(n) C _(out)+2·R _(n) ·C _(load)  (28)

The ratio of the delay of a CMOS NAND to the delay of a previously proposed GDI cell is

$\frac{t_{{PHL}{({CMOS})}}}{t_{{PHL}{({GDI})}}},$

and is approximated by:

$\begin{matrix} {1.52 \leq \frac{t_{{PHL}{({CMOS})}}}{t_{{PHL}{({GDI})}}} \leq 2} & (29) \end{matrix}$

The delay ratio is bounded above by 2 for a high load, and is bounded below at 1.52 for a low load.

Note, that this ratio improves if the effect of the body-source diode in previously proposed GDI cell is considered (14), and if the delay formula in (7) is refined by including a bulk-source conduction current in (13).

For the analysis of fan-out bounds, the dual-transistor previously proposed

GDI cell is compared to CMOS gates with equivalent functional complexity. This approach allows definition of fan-out bounds using the logic-effort concept of I. Sutherland, B. Sproull and D. Harris, “Logical Effort—Designing Fast CMOS Circuits”, Morgan Kaufmann Publishers, p. 7, contents of which are hereby incorporated by reference. The relationship between the logic effort, fan-out, and effort delay of a logic gate is given by:

f=g·h  (30)

where f is the effort delay, g is the logic effort, and h represents the fan-out of the gate. For a desired delay, reducing the logic effort results in an improved fan-out by the same ratio.

Values of logic effort are given by Sutherland for the inputs of various static CMOS gates normalized relative to the logic effort of an inverter. While a previously proposed GDI cell's logic effort is close to a standard inverter, the equivalent logic functions in CMOS are NAND, NOR or MUX, depending upon the previously proposed GDI cell input configuration (see Table 1). Using Sutherland's logic effort values, the fan-out improvement factor for a previously proposed GDI cell over CMOS are as follows: 4/3 for F1 and F2 vs. CMOS NAND; 5/3 for F1 and F2 vs. CMOS NOR; 2 for previously proposed GDI MUX vs. CMOS MUX.

The above fan-out improvement values are correct for the gate input of a previously proposed GDI cell, for which the previously proposed GDI cell characteristics are similar to those of the CMOS inverter. If the diffusion input is considered, an additional factor is applied to represent the capacitance ratio between the gate and diffusion inputs, and the factors given above are multiplied by C_(Gate)/C_(diff) Both capacitance parameters are defined by the design technology.

Previously proposed GDI cell fan-in analysis is based on the structural similarity of previously proposed GDI and complementary CMOS logic gates. As shown below, an (n+2)-input previously proposed GDI cell can be implemented by the extension of any n-input CMOS structure. While the stack of serial MOSFET devices and in CMOS gate fan-in are limited by body-effect considerations, the addition of the diffusion inputs (i.e. the dedicated logic terminals) for a previously proposed GDI gate with the same structure results in improved fan-in, given by:

Fan-in_(GDI)=Fan-in_(CMOIS)+2  (31)

Note that for the F1 and F2 functions, where only one additional dedicated diffusion input is used, the fan-in increases by 1 relative to CMOS.

In summary, the GDI logic cell shows improvement over comparable CMOS logic in terms of delay, number of transistors, area, and power consumption. GDI logic circuits, however, have certain drawbacks, which are primarily related to input connections to MOSFET wells. Firstly, GDI logic circuits may experience a threshold drop, and, in some cases, an increased diffusion input capacitance. Both effects exist in PTL techniques as well, and were considered in the simulations and analysis presented herein. Secondly, there is a relative increase of circuit area due to separated MOSFET wells (comparisons based on actual logic gate layouts are presented below).

The previously proposed GDI cell shown in FIG. 2 has a connection between the two common logic terminals connection. Reference is now made to FIG. 8, which is a circuit diagram of a logic circuit having separate common logic terminals. The logic cell of FIG. 8 is designated herein as a double-gate-input previously proposed GDI cell (prior-art GDI*). The previously proposed GDI* logic cell 800 has two transistor networks, p-type networks 810 and n-type transistor network 820, which each contain a single transistor. The previously proposed GDI* cell has two logic input terminals, I (830.1) and I* (830.2), which are connected to the gates of the PMOS and NMOS transistors respectively, a first dedicated logic terminal (P) 840 at the outer diffusion node of the PMOS transistor, and a second dedicated logic terminal (N) 850 at the outer diffusion node of the NMOS transistor 820. The common diffusion logic terminal (D) 850 is connected to the drains of both transistors. As shown in FIG. 8, in the previously proposed GDI* logic cell there is a separate input to each gate, I and I′, instead of a common input to the gates of both p-type and n-type transistors as in FIG. 2. For proper operation, the common logic inputs, I and I′, are provided with mutually exclusive signals. Ensuring that the input signals are mutually exclusive can be achieved by an appropriate circuit environment, as in a previously proposed GDI-latch, or by applying an inverter to one of the inputs.

Reference is now made to FIG. 9, which shows the structure of a latch based upon the previously proposed GDI* cell of FIG. 8. The latch consists of two previously proposed GDI* cells, 910 and 920, and inverter 930, with logic inputs at logic terminals 920.1 and 920.2 respectively. The logic output is at the common diffusion terminal 920.5 of previously proposed GDI* cell 920. The two cells are connected by inverter 930, through which the common diffusion outputs, 910.5 and 920.5, of the two cells are connected. The two dedicated logic terminals, 920.3 and 920.4, of previously proposed GDI* cell 920 are respectively connected to logic inputs 910.1 and 910.2 of the previously proposed GDI* cell 910. Dedicated logic terminals, 910.3 and 910.4, of previously proposed GDI* cell 910 are tied to V_(DD) and ground respectively.

In the previously proposed GDI* latch an inverter is used to obtain in-circuit swing restoration. Table 3 shows the performance of the previously proposed GDI* latch.

TABLE 3 A B Q 0 0 no change 0 1 Q′ 1 0 no change 1 1 no change

Reference is now made to FIGS. 10 a-10 e, which are simplified diagrams of previously proposed GDI latches. FIG. 10 a shows a T-latch based upon the previously proposed GDI* latch of FIG. 9. T-Latch 1000 consists of a previously proposed GDI flip-flop 1012 and inverter 1014. The logic signal is input at terminal T 1013, and is fed through inverter 1014 to input A 1015 of TFF 1000, and directly to input B 1016 of flip-flop 1012. The inputs of the T-Latch are connected through inverter 1014, so that an efficient 8-transistors implementation is achieved.

Reference is now made to FIG. 10 b, which shows a T-latch 1020 based on the standard previously proposed GDI cell. FIG. 10 b is a circuit diagram of a previously proposed GDI T-latch. T-latch 1020 consists of previously proposed GDI cell 1030, and three inverters 1041 to 1043. The logic signal is input to the common logic input (G) of previously proposed GDI cell 1030. The output at the common diffusion terminal (D) of previously proposed GDI cell 1030 is connected to the T-Latch output Q via inverter 1043. Inverters 1041 and 1042 feed back the output signal to the dedicated logic terminals (P and N) of previously proposed GDI cell 1030. Note that in FIG. 10 b inverters INV2 1042 and INV3 1043 are added for swing restoration and can be eliminated in zero-V_(TH) technologies. In any case the implementation is effective, and more compact than CMOS alternatives. The presented circuit can be extended to TFF by adding an edge detector circuit containing two previously proposed GDI cells (NOT and AND).

Three previously proposed GDI D latches are shown FIGS. 10 c, 10 d, and 10 e. Reference is now made to FIG. 10 c which shows the structure of a previously proposed GDI F1-based D-latch 1050. This circuit is compatible for implementation in standard CMOS technology. D-latch 1050 consists of two previously proposed GDI cells, 1060 and 1062, AND gates, 1070 and 1072, and inverter 1074. The common diffusion terminal of previously proposed GDI cell 1060 is connected to the common logic input of previously proposed GDI cell 1062. The D and CLK latch inputs are connected via AND gates 1070 and 1072, and inverter 1074 to the first dedicated logic terminals of the previously proposed GDI cells, 1060 and 1062. The second dedicated logic terminals of the previously proposed GDI cells, 1060 and 1062, are tied to ground.

Reference is now made to FIG. 10 d which shows the structure of a previously proposed GDI F2-based D-latch 1070. D-latch 1070 is structured similarly to D-latch 1050 of FIG. 10 c, but has the AND gate outputs connected to the second dedicated logic terminals of the two previously proposed GDI cells, and the first dedicated logic terminals tied high.

Reference is now made to FIG. 10 e which shows the structure of a previously proposed GDI D-Latch based on previously proposed GDI cells. D-latch 1090 consists of two previously proposed GDI cells, 1092 and 1093, and inverters, 1094 and 1095. Inverter 1094 is connected between the common diffusion output of previously proposed GDI cell 1093 and the second dedicated logic terminal of previously proposed GDI cell 1092. Inverter 1095 is connected between the common diffusion terminal of previously proposed GDI cell 1092 and the second dedicated logic terminal of previously proposed GDI cell 1093. The D-latch inputs and outputs are at the first dedicated logic terminals of the two previously proposed GDI cells, 1092 and 1093, and the inverter inputs. Note that D-latch 1050 and D-latch 1080 latch on the falling edge of the clock, and that D-latch 1090 latches on the rising edge of the clock. The edge used to latch the data is selected by the circuit designer by providing the proper logic at the clock input.

FIGS. 2-10 are based on a dual-transistor previously proposed GDI (or previously proposed GDI*) logic cell, which has a single transistor in each of the two logic blocks. The multi-transistor previously proposed GDI logic circuit, each logic block contains a transistor network composed of multiple transistors. The logic blocks may have more than one common logic input, where each additional common logic terminal is connected to the gates of complementary transistors in both of the transistor networks.

Table 1 lists the various logic functions which can be provided by a single previously proposed GDI cell. The previously proposed GDI cell is an extension of a single-input CMOS inverter structure a triple-input logic structure. The two additional inputs of the previously proposed GDI cell are provided by the first and second dedicated logic terminals, which in the CMOS cell do not serve as logic terminals but instead are tied to a fixed voltage.

Reference is now made to FIG. 11 which is a simplified block diagram of a comparison between an n-input CMOS logic gate and an (n+2)-input previously proposed GDI logic circuit. Previously proposed GDI circuit 1100 consists of two n-input logic blocks, 1110 and 1120, with additional logic inputs at the P and N terminals, yielding a total of n+2 logic inputs. CMOS circuit 1140 is similarly composed of two n-input logic blocks, 1150 and 1160, however the P and N terminals are tied to V_(DD) and V_(SS) respectively, and do not serve as logic terminals. Extension of any n-input CMOS structure to an (n+2)-input previously proposed GDI cell can be done by introducing a logic input at the first dedicated logic terminal (P) of the PMOS block 1110 (instead of the supply voltage V_(DD)), and a second logic input at the second dedicated logic terminal (N) in the NMOS block 1120 (instead of V_(SS)). A previously proposed GDI circuit having more than one transistor in the P and N logic blocks, 1120 and 1130, is designated herein as a multi-transistor GDI circuit. (A comparable extension can be made to any complementary transistor structure, and is not limited to CMOS.)

Previously proposed GDI circuit implementations can be represented by the following logic expression:

Out= F (x ₁ . . . x _(n))P+F(x ₁ . . . x _(n))N  (32)

where F(x1 . . . xn) is the logic function of the n-MOS block (not of the whole original n-input CMOS structure). An example of such an extension can be seen in FIG. 12, which shows a previously proposed GDI circuit 1200, having logic blocks 1210 and 1220, consisting of triple-input transistor networks (inputs A, B, and C). The two logic blocks implementing complementary logic functions. Since the P and N terminals previously proposed GDI logic circuit 1200 serve as logic inputs, there are five logic terminals in all. A complementary CMOS logic circuit having the same structure would have only three logic inputs (A, B, and C).

The expression in equation (32) can be used to implement a Shannon expansion (see E. Shannon, W. Weaver, “The Mathematical Theory of Information”, University of Illinois Press, Urbana—Champaign, IL, 1969, contents of which are hereby incorporated by reference). A function Z with inputs {x1, . . . , xn} can be expanded as:

Z(x ₁ . . . x _(n))=H(x ₂ . . . x _(n))x ₁ +J(x ₂ . . . x _(n)) x ₁  (33)

where the functions H and J are:

H=Z| _(x) ₁ ₌₁ ,J=Z| _(x) ₁ ₌₀  (34)

Shannon expansion is a very useful technique for precomputation-based low-power design of sequential logic circuits due to its multiplexing properties (see M. Alidina, J. Monteiro, S. Devadas, A. Ghosh, and M. Papaefthymiou, “Precomputation-Based Sequential Logic Optimization for Low Power”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 2, no. 4, pp. 426-435, December 1994), contents of which are hereby incorporated by reference. In multiplexer-based precomputation, input X1 can be used as an enable line for the H and J functions, and as the select line of a multiplexer which chooses between the data of the H and J functions. For a given value of X1 only one of the H or J blocks will operate, significantly reducing the power dissipation of the circuit.

Reference is now made to FIG. 13, which is a simplified block diagram of an extended previously proposed GDI circuit. The previously proposed GDI architecture illustrated in FIG. 13 is based on equation (32). Extended previously proposed GDI circuit 1300 consists of an n-input switching block 1330 (which may be either a previously proposed GDI cell or a multi-transistor previously proposed GDI circuit). Further logic inputs are provided to logic gates 1310 and 1320. The logic output of logic gate 1310 is connected to the first dedicated input of switching block 1330, and the logic output of logic gate 1320 is connected to the second dedicated input of switching block 1330. Extended previously proposed GDI circuit 1300 operates essentially as a multiplexer, selecting between logic gate A 1310 and logic gate B 1310. Logic gates 1310 and 1320 implement functions A(Xn+1 . . . Xp) and B(Xp+1 . . . Xr) respectively, in any technologically compatible manner. Switching block 1330 connects between the logic gates and the following logic block C 1340. Depending on the value of F(x1 . . . xn), only one of the functions will drive the data computed as a result of its input transitions, while the data transitions from the other function are prevented from propagating to the next logic block C.

The previously proposed GDI logic circuits (i.e. previously proposed GDI cell, previously proposed GDI* cell, multi-transistor previously proposed GDI circuit, and extended previously proposed GDI circuit) described above can serve as building blocks for more complex logic circuits. The applicability of the Shannon expansion (33 and 34) to any logic function, allows a previously proposed GDI implementation of any digital circuit, thereby achieving a low power implementation of the logic function. Due to their special properties, previously proposed GDI logic circuits can be used for design of low-power combinatorial circuits. Two or more previously proposed GDI logic circuits are interconnected to form a higher order previously proposed GDI logic circuit. Several higher order logic circuits composed of interconnected previously proposed GDI logic cells are given below, along with performance data.

A method for the design of combinatorial logic circuits consisting of interlinked previously proposed GDI cells is now presented. The combinatorial circuit design combines two approaches: (1) Shannon expansion and (2) combinational logic pre-computation, where transitions of logic values are prevented from propagating through the circuit if the final result does not change as a result of those transitions. Previously proposed GDI logic circuits can be realized using only the standard previously proposed GDI cell. This is in contrast to PTL-based logic, which has no simple and universal cell library available. The development of circuit synthesis tools for PTL is consequently problematic.

The design of previously proposed GDI logic circuits is based on Shannon expansion (27), where any function F can be written as follows:

$\begin{matrix} \begin{matrix} {{F\left( {x_{1}\mspace{14mu} \ldots \mspace{14mu} x_{n}} \right)} = {{{x_{1}{H\left( {x_{2}\mspace{14mu} \ldots \mspace{14mu} x_{n}} \right)}} + {\overset{\_}{x_{1}}{G\left( {x_{2}\mspace{14mu} \ldots \mspace{14mu} x_{n}} \right)}}} =}} \\ {= {{x_{1}{F\left( {1,{x_{2}\mspace{14mu} \ldots \mspace{14mu} x_{n}}} \right)}} + {\overset{\_}{x_{1}}{F\left( {0,{x_{2}\mspace{14mu} \ldots \mspace{14mu} x_{n}}} \right)}}}} \end{matrix} & (35) \end{matrix}$

As shown above, the output function of a previously proposed GDI cell (where A, B and C are inputs to G, P and N respectively) is:

Out=AC+ĀB  (36)

The similarity of form between equations (35) and (36), makes the standard previously proposed GDI cell suitable for implementation of any logic function, which can be written by Shannon expansion. Thus:

If A=X ₁ ,C=F(1,X ₁ . . . X _(N)),B=F(0,X ₁ . . . X _(N)) then

Out=F(x ₁ . . . x _(n))=x ₁ F(1,x ₂ . . . x _(n))+ x ₁ F(0,x ₂ . . . x _(n))  (37)

Reference is now made to FIG. 14 which is a simplified flowchart of a recursive algorithm for implementing logic functions by previously proposed GDI cells. The algorithm synthesizes any combinatorial function by means of 3-input previously proposed GDI cells. The algorithm's steps may be summarized as follows:

Given a function F with n variables:

-   -   Step 1400 Check, if function F is equal to 1, 0 or a         non-inverted single variable.     -   Step 1410 If F is equal, provide a connection to a high logic         signal, a connection to a low logic signal, or a logic input.     -   Step 1420 If F is not equal, expand F into two functions H and J         according to the Shannon expansion (35) of F for a selected         variable Xn.     -   Step 1430 Go to step 1400 to find previously proposed GDI         implementation for both H and G.     -   Step 1440 Use a previously proposed GDI cell MUX for F function         implementation, with variable Xn at common input, and the H and         J implementations each connected to a separate dedicated logic         terminal.         The algorithm of FIG. 14 can also be expressed in pseudo-code as         follows, where G(d1,g,d2)=not(g)*d1+g*d2:

Algorithm SyntGDI(f,n)

If (f==1) then return(‘1’)

-   -   else if (f==0) then return(‘0’)         -   else return(G(SyntGDI(f|x_(n)=1),x_(n),             SyntGDI(f|x_(n)=0)));

As an example, if F(x1,x2,x3)=XOR(x1,x2,x3), the above procedure returns:

NG(G(NG(0,x3,1),x2,NG(1,x3,0)),x1,G(NG(1,x3,0),x2,NG(0,x3,1)))

where ‘G’ stands for previously proposed GDI and ‘NG’ for an inverted previously proposed GDI cell that is inserted post-process in order to maintain signal integrity. This approach can be used in combination with existing cell library-based synthesis tools to achieve an optimized design.

Reference is now made to FIG. 15, which is a simplified flowchart of a method for designing a logic circuit. FIG. 15 presents the method of FIG. 14 in more detail, but essentially involves the same recursion, to progressively simplify the logic function. Each recursion reduces the number of function variables by one, until eventually the required function can be represented as an interconnected network of simple previously proposed GDI multiplexing cells. Once a single variable representation has been reached, the recursion cycles end, combining the previously proposed GDI cells into a structure that performs the specified logic function. The method thus provides a logic circuit design consisting of interconnected previously proposed GDI logic cells. The logic cells are dual-transistor previously proposed GDI cells, as shown in FIG. 2.

In step 1500 a logic function having at least one logic variable is received. The logic function to be synthesized, F, is set equal to the received logic function in step 1510. The synthesis recursion cycle begins at step 1515. In step 1520 the synthesized function is checked to determine if it is a non-inverted single logic variable X. If so, a connection for a logic input is provided in step 1525. The synthesis recursion cycle is then discontinued.

In step 1530 the synthesized function is checked to determine if it is a high logic level. If so, a logic design consisting of a connection to a high logic level is provided in step 1535. The synthesis recursion cycle is then discontinued.

In step 1540 the synthesized function is checked to determine if it is a low logic level. If so, a logic design consisting of a connection to a low logic level is provided in step 1545. The synthesis recursion cycle is then discontinued.

If the logic function being synthesized is not equal to either a high, low, or non-inverted logic variable, a Shannon expansion of F is performed to reduce the number of logic variables by one. In step 1550 a first logic function H, a second logic function J are extracted from a Shannon expansion of the synthesized function for a selected logic variable Xn. A recursion cycle is then performed for each of the extracted functions, to obtain a circuit design for functions H and J.

The recursion cycle for function H involves setting the synthesized function to H in step 1560, and entering a new recursion cycle at step 1515. When the recursion ends, a sub-circuit design of interconnected previously proposed GDI cells is provided for function H.

Next a recursion cycle for function J is performed. In step 1570 the synthesized function is set to Z, and a new recursion cycle is entered at step 1515. When the recursion ends, a sub-circuit design of interconnected previously proposed GDI cells is provided for function J.

In step 1580 the sub-circuit designs obtained for functions H and J are combined using a previously proposed GDI cell. A final logic circuit design is provided consisting of a logic element with the selected logic variable at the common logic terminal G, the output of the first sub-circuit connected to the first dedicated logic terminal P, and the output of the second sub-circuit connected to a second dedicated logic terminal N. The logic circuit output is at the logic element common diffusion terminal. The synthesis recursion cycle then ends.

The Shannon expansion of the logic function being synthesized is performed in step 1550. Reference is now made to FIG. 16, which is a simplified flowchart of a method for extracting the first and second logic functions (H and J) from the synthesized function. In step 1600, H is extracted from F by setting the selected variable to High, that is H=F{X₁ . . . Xm| Xn=1}. In step 1610, J is extracted from F by setting the selected variable to Low, that is J=F{X₁ . . . Xm| Xn=0}.

The previously proposed circuit design method includes the further step of inserting buffers into the logic circuit design. An analysis was presented above to determine the maximum number of previously proposed GDI cells which can be cascaded without requiring a buffer to stabilize signal levels. Equations (14) and (25) are used to calculate the values of N1 and N2, and the maximal number of stages which can be cascaded between two buffers equals the minimal value between N1 and N2. N1 and N2 depend on process parameters, frequency demand, and output loads. For example, given a 0.35 um technology process (with V_(TH)=0.5V), a frequency demand of 40 MHz, and a load capacitance of 100 fF, the maximal number of stages is dictated by equation (14), where N1 is calculated with V_(drop)=V_(TH). The resulting value indicates that a buffer is required after every two cascaded previously proposed GDI cells. Buffer elements are inserted between previously proposed GDI cells to prevent the occurrence of chains that exceed a specified length. The buffer elements may consist of one or more inverters.

Reference is now made to FIG. 17, which is a simplified flowchart of a method for providing a previously proposed GDI logic circuit. In step 1700 a previously proposed GDI logic circuit is designed for a specified function by the method of FIG. 15. In step 1710 the required previously proposed GDI cells are provided, and in step 1720 the previously proposed GDI cells are connected as specified by the circuit design.

One advantage of the above described methods is the ability to calculate the maximal number of transistors needed for implementation of an n-input function, before the actual logic circuit design. The maximal number of transistors is calculated as:

M=2·2^(n-1)=2·N=2^(n)  (38)

where M is the maximal number of transistors that are needed to implement the function, N is the maximal count of previously proposed GDI cells and n is the number of variables in the given function. Knowledge of the maximal number of previously proposed GDI cells required firmly determines the final maximal area of the circuit.

Using the Shannon expansion in regular logic circuits results in reduced power dissipation but requires significant area overhead. The area overhead is caused by the additional precomputation circuitry that is required. The Shannon-based previously proposed GDI design does not require a special precomputation circuitry because of the MUX-like nature of the previously proposed GDI cell, so that most area overhead is eliminated.

EXAMPLES

Reference is now made to the following examples, which together with the above descriptions illustrate the invention in a non-limiting fashion.

Simulations were performed to determine the relative performance of five previously proposed GDI logic gates to other logic gate technologies. Five sets of comparisons were carried out on various logic gates, MUX, OR, AND, F1, and F2. Reference is now made to FIGS. 18 a, 18 b, and 18 c, which show previously proposed GDI XOR, AND, and OR gates respectively, and their equivalents in CMOS, TG, and NMOS Pass-Gate (N-PG) technologies. The cells were designed for a minimal number of transistors for each technique. A buffer was added to the N-PG cells, because of low swing of output voltage (V_(drop)>0.3 V_(DD)). Most circuits were implemented with a W/L ratio of 3, to achieve the best power-delay performance. The logic circuits were designed at the transistor-level in a 0.35 μm twin-well CMOS technology (with V_(TN)=0.56V and V_(TP)=−0.65V). The circuits were simulated using Cadence Spectre at 3.3V, 40 Mhz and 27° C., with a load capacitance of 100 fF. In the simulations the well capacitance and other parasitic parameters were taken into account. Each set of comparisons includes a logic cell implemented in the four logic techniques: previously proposed GDI, CMOS, Transmission Gate and n-MOS Pass Gate. The same logic value transitions were supplied to the inputs of the test circuits for each technique. Measured values apply to the transitions of inputs connected to the transistor gates, in order to achieve a consistent comparison.

Measurements were performed on test circuits that were placed between two blocks, which contain circuits similar to the device under test (DUT). The measured power is that of the DUT, including the power consumed by driving the next stage, thus accounting for the input power consumption, and not just the power directly consumed from supply. This configuration gives more realistic environment conditions for test circuit, instead of the ideal input transitions of simulator's voltage sources.

The fact that no previously proposed GDI cell contains a full V_(DD) to Gnd supply, implies that the only power consumed is through the inputs, as previously proposed GDI cells are fed only by the previous circuits. A similar phenomenon is partially observed in most PTL circuits, but in PTL the power consumption from the source is caused by CMOS buffers, which are included in every regular PTL. Yet, in real circuits and simulations, current flow from the sources can be measured in previously proposed GDI. The current flow is caused by buffers that are connected between cascaded cells. Hence, a fair comparison between the techniques was performed for measurements carried out from series of cells with buffers and not from a single cell. The previously proposed GDI and TG test circuits contain two basic cells with one output buffer. The N-PG test circuit contains two buffers, one after each cell. The CMOS test circuit has no buffers.

For each technique, measurements of average power, maximal delay and number of transistors were performed. The results of the logic gate comparisons for previously proposed GDI, CMOS, TG, and N-PG using the circuit topologies shown in FIGS. 18 a, 18 b, and 18 c are given in Table 4.

TABLE 4 Previously proposed GDI CMOS TG N-PG Gate type Logic Power Delay # Power Delay # Power Delay # Power Delay # in series expression (μW) (nsec) tr. (μW) (nsec) tr. (μW) (nsec) tr. (μW) (nsec) tr. MUX ĀB + AC 35.7 1.1 8 49.7 2.1 24 44.9 1.0 16 47.5 3.1 16 OR A + B 26.3 1.2 8 32.9 1.7 12 36.2 1.3 16 32.6 2.7 16 AND AB 25.7 0.9 8 34.1 1.4 12 30.8 0.8 16 30.1 2.8 16 F1 ĀB 31.2 0.8 8 45.2 1.5 12 31.8 1.1 16 31.8 2.5 16 F2 Ā + B 32.0 1.3 8 43.1 1.9 12 33.2 1.4 16 29.6 3.5 16

Amongst all the design techniques, previously proposed GDI has the minimal number of transistors. Each previously proposed GDI gate was implemented using only 2 transistors. The worst case, with respect to transistor count, is for the CMOS MUX gate (multiplexers are the well-known domain of pass-transistor logic). In this sense, the PTL techniques are inferior comparatively to previously proposed GDI.

Results are given for power dissipation in different gates. The MUX gate has the largest power consumption of all the logic gates, because of its complicated implementation (particularly in CMOS) and the presence of an additional input. On the other hand, the AND gate's power dissipation is the minimal amongst all the gates. Most of previously proposed GDI logic gates prove to be the most power efficient in comparison with the four other design techniques (only for the F2 gate is there an advantage of N-PG over the previously proposed GDI gate).

The best performance with respect to circuit delay was measured in the previously proposed GDI and TG circuits. The advantage of the TG technique in some circuits can be explained by the fact that one n-MOS and one p-MOS transistor are conducting at the same time for each logic state in a TG gate. Note that the results for CMOS delays compared to previously proposed GDI are in most cases bounded according to (29), as expected. Circuits implemented in N-PG are the slowest, because of the need for additional buffer circuitry in each gate.

In summary, amongst the presented design techniques, previously proposed GDI proves to have the best performance values and the lowest transistor count. Even in the cases where the power or delay parameters of some previously proposed GDI gates are inferior, relative to TG or N-PG, the power-delay products and transistor count of previously proposed GDI are lower. Only the TG design method is a viable alternative to previously proposed GDI if a high frequency operation is of concern.

A fair comparison of the properties of the different logic techniques mentioned above involves measuring delay and power consumption under different load conditions of the cell. Parametric simulations for power and delay measurement for previously proposed GDI circuits under differing load conditions were performed. FIG. 19 shows power and delay results for OR and AND cells under different load conditions, for the previously proposed GDI (F1 configuration), CMOS and PTL techniques. The simulations were carried out in SPECTRE to compare previously proposed GDI NOR and AND cells implemented in CMOS, N-PG, and TG, in 0.24 μm CMOS technology. A regular CMOS inverter was used as a load for the DUT, with dimensions of 2.4 μm/0.24 μm for PFET and 0.9 μm/0.24 μm for NFET. In this technology the given load size applies a load capacitance of about 1 fF. In order to achieve a dependence of simulations on load conditions, load size was multiplied by a scaling parameter, PS, varying from 1 to 3. The results of power and delay as function of the PS parameter are presented in FIG. 19, and show the consistent advantage of previously proposed GDI.

In order to cover a wide range of possible circuits, design methods and properties comparisons for several digital combinatorial circuits were implemented using various methods (previously proposed GDI, PTL and CMOS), design techniques, and technology processes. Table 5 contains an exemplary list of high-level circuits implemented to compare design methods and processes.

TABLE 5 Process Technology 0.35 0.5 0.8 1.6 Circuit type μm μm μm μm Adder CLA — G, C G*, C*, P — Ripple — G, C — — Combined — G, C — — Comparator — — G, C, P G, C, P Multiplier — G, C — — Counter** G, C — — — G—previously proposed GDI C—CMOS P—PTL *Fabricated circuits **0.35 twin-well technology

Since the full GDI library is implementable in a regular p-well CMOS process, only the function F1 and its expansions were implemented. FIG. 20 shows GDI circuits and layouts for basic functions for a regular p-well process.

Comparative results were obtained for several high-level circuits, such as the Carry-Lookahead Adder (CLA). The CLA structure is well known and widely used due to its high-speed operation while calculating the carries in parallel. The carry of the i-th stage, C_(i) may be expressed as:

C _(i) =G _(i) +P _(i) ·C _(i-1)  (39)

where

G _(i) =A _(i) ·B _(i) generate signal  (40)

P _(i) =A _(i) +B _(i) propagate signal  (41)

Expanding this yields

C _(i) =G _(i) +P _(i) G _(i-1) +P _(i) P _(i-1) G _(i-2) P _(I) C ₀  (42)

The sum S_(i) is generated by

S=C _(i-1) ⊕A _(i) ⊕B _(i)  (43)

or C _(i-1) ⊕P _(i)(if P _(i) =A _(i) ⊕B _(i))

For four stages of lookahead, the appropriate terms are

C ₀ =G ₀ +P ₀ CI  (44)

C ₁ =G ₁ +P ₁ G ₀ +P ₁ P ₀ CI  (45)

C ₂ =G ₂ +P ₂ G ₁ +P ₂ P ₁ G ₀ +P ₂ P ₁ P ₀ CI  (46)

C ₃ =G ₃ P ₃ G ₂ +P ₃ P ₂ G ₁ +P ₃ P ₂ P ₁ G ₀ +P ₃ P ₂ P ₁ P ₀ CI  (47)

FIG. 21 shows examples of generic carry-lookahead adders. FIG. 21 a is a basic scheme, and FIG. 21 b is a 3-bit carry generator. The PG generation and SUM generation circuits surround a carry-generate block. The circuit presented is 4-bit adder that can be replicated in order to create 8-bit adder, due to fan-in and size limitations of the gates.

FIG. 22 shows a four-bit ripple comparator consisting of a cascade of 4 identical basic units, while the comparison data is transmitted through the units. Comparison of the MSB digit is done first, proceeding down to the LSB. The outcome of comparison in every unit is represented by two signals C and D according to Table 6.

TABLE 6 C D Result 1 0 A > B 0 1 A < B 0 0 A = B

Every basic unit includes two inputs of comparison data from previous units. The logic implementation of each unit is based on following expressions:

D _(out) =D _(in) +ĀB C _(in)   (48)

C_(out) =C _(in) +A B D _(in)   (49)

FIG. 23 shows the structure of a 4-bit multiplier. The multiplier contains an array of interconnected basic cells. The multiplier circuit is based on the generation of partial products and their addition, thereby creating a final product. The following equations represent both the multiplied numbers and the product:

$\begin{matrix} {\mspace{79mu} {{X = {\sum\limits_{i = 0}^{m - 1}\; {x_{i}2^{i}}}},{Y = {\sum\limits_{j = 0}^{n - 1}\; {y_{j}2^{j}}}},}} & (50) \\ {P = {{X \times Y} = {{\sum\limits_{i = 0}^{m - 1}\; {x_{i}{2^{i} \cdot {\sum\limits_{j = 0}^{n - 1}\; {y_{j}2^{j}}}}}} = {{\sum\limits_{i = 0}^{m - 1}\; {\sum\limits_{j = 0}^{n - 1}\; {\left( {x_{i}y_{j}} \right)2^{i + j}}}} = {\sum\limits_{k = 0}^{m + n - 1}\; {p_{k}2^{k}}}}}}} & (51) \end{matrix}$

The basic multiplier cell is shown in FIG. 24. Each multiplier cell represents one bit of partial product and is responsible for:

1. Generating a bit of the correct partial product in response to the input signals.

2. Adding the generated bit to the cumulative sum propagated from the row above.

The cell consists of two components—an AND gate to generate the partial product bit, and an adder to add this bit to the previous sum.

Simulation results were used to make performance comparisons of some of the higher order digital circuits mentioned above. All given measurements were carried out on a representative pattern of possible input transitions, with the worst case assumption used to find a maximal delay of the circuit, and the power dissipation was calculated as an average over the pattern.

Results are now presented for an eight-bit CLA adder. An eight-bit adder was realized in a 1.6 μm CMOS process. Two chips were designed, and their layouts are shown in FIG. 25. FIG. 25 a shows a CLA in previously proposed GDI and CMOS, and FIG. 25 b shows a CLA in previously proposed GDI and TG. Performance comparisons were done by simulation using Cadence Spectre at V_(DD)=5V, f_(CLK)=10 MHz and 27° C. Several parameters were measured: average power, maximal delay, power-delay product, number of transistors and circuit area. The results are assembled in Table 7 and FIG. 26.

TABLE 7 Power Delay Power- Number Area Logic style [mW] [n sec] Delay of tran. [μm²] Previously 7.33 10.24 81.53 366 375200 proposed GDI CMOS 8.26 14.84 144.36 392 330120 TG 10.96 9.34 105.72 624 668812

As can be seen, the previously proposed GDI Adder proves to be the most power efficient circuit. Power dissipation in previously proposed GDI is less than in CMOS and in TG, yet the delay of TG is less than that of previously proposed GDI. The CMOS circuit has the highest delay, 44.9% more than previously proposed GDI. In spite of the inferior speed of previously proposed GDI relative to TG, the power-delay product of previously proposed GDI is less than both TG and CMOS. Because of the use of limited previously proposed GDI cell library in p-well CMOS process, the number of transistors and area of CMOS and previously proposed GDI circuits are close, but much less than in the TG Adder implementation.

A comparison of an eight-bit comparator circuit was performed for previously proposed GDI vs. CMOS and N-PG technologies. The implementation of the eight-bit comparator was carried out in the same 1.6 μm CMOS process described above, at V_(DD)=5V, f_(CLK)=100 MHz, and 27° C. The layout of an eight-bit comparator chip containing the three circuits that were tested is given in FIG. 27. Previously proposed GDI proves to have the best performance among the tested design methods, as shown in FIG. 28 and Table 8.

TABLE 8 Power Delay Power- Number Area Logic style [mW] [n sec] Delay of tran. [μm²] Previously 1.41 4.21 6.82 96 198000 proposed GDI CMOS 1.82 5.16 10.51 96 178980 N_PG 3.87 7.37 28.48 96 148990

The results of the power, delay and power-delay product of previously proposed GDI are best among the compared circuits, while N-PG has the worst performance results. Here, as well as in the Adder circuit, the limited previously proposed GDI library was used because of process constraints. As a result, the final area of previously proposed GDI comparator is greater than CMOS and N-PG, while the number of transistors in all 3 circuits is the same.

A comparison between previously proposed GDI and CMOS performance was also made for a four-bit multiplier. The multiplier was implemented in 0.5 μm CMOS technology, with a 3.3V supply, at 50 MHz and 27° C. In order to achieve a robust measure of the power-delay product, simulations were run on CMOS and previously proposed GDI circuits that were parametric in their size. Running a simulation with and area parameter of α=2 indicates that the transistors widths are twice the widths for α=1. Spectre simulations were done on schematic circuits, while changing the area parameter, α, from 1 to 8. FIGS. 29-31 show the changing of power (FIG. 29), delay (FIG. 30), and power-delay product (FIG. 31) as function of α. As can been seen, previously proposed GDI shows better results in all parameters for all area coefficients. Twenty-six transistors were used for the previously proposed GDI multiplier, relative to 44 transistors used for the CMOS multiplier. An additional comparison was done for circuits with the same delay value (1.03 nsec). The results of area, power dissipation and power-delay are shown in Table 9.

TABLE 9 Previously proposed GDI CMOS Area Power Power- Area Power Power- [μm²] [mW] Delay [μm²] [mW] Delay 333 0.3079 0.9297 1503 1.265 1.09

An 8-bit Adder designed in previously proposed GDI and CMOS (see FIG. 25 a) was fabricated in 1.6 μm CMOS technology (MOSIS). The voltage supplies of the two circuits were separated in order to enable a separate power measurement. After the post-processing, three types of ICs were available: previously proposed GDI Adder, CMOS Adder, and ICs containing both circuits connected. Measurements of the dynamic power of the circuits could thus be carried out, while eliminating the static power dissipation and power dissipation of output pads, which contain buffers and additional circuitry. A photograph of the test chip is shown in FIG. 32.

Several sets of measurements and tests were applied to test chips, using the EXCELL 100+ testing system of IMS. In order to demonstrate the influence of scaling on a given previously proposed GDI circuit, the measurements were performed with various supply voltages.

Operational tests were performed on both circuits to check for proper operation, while using two scripts, which generated patterns of input values. The first set of values was generated according to a binary order of input numbers. The second set included over 20,000 random transitions, which were used for delay and power measurements.

The maximal delay of both circuits was measured by increasing the frequency of input signal, and checking the results of the increase. The frequency at which the first error appears defines the delay of the circuit. Table 10 presents the delays measured for previously proposed GDI and CMOS adders for various voltage supply levels.

TABLE 10 Delay (nsec) vs. Voltage Supply Level Logic Style 5 Volt 4 Volt 3.5 Volt 3 Volt 2.5 Volt Previously 76 100 116 153 234 proposed GDI CMOS 77 100 117 154 235 Note that for the given implementation and the output load, defined by the testing system, both circuits were designed to have equal delays.

For the dynamic power measurements a set of measurements at low frequencies were performed for various supply voltages, so as to enable eliminating the influence of the circuitry in the output pads which causes high additional power dissipation. The low frequency results represent the static power dissipation of the test chip. Power measurements at high frequencies were performed and the static power values were subtracted from the high frequency results to achieve the dynamic power at the given frequency.

The final results for dynamic power dissipation are shown in Table 11.

TABLE 11 Absolute (mWatt) and Normalized (mWatt/MHz) Power vs. Voltage Supply Level 5 4.5 4 3.5 3 2.5 Logic Style Volt Volt Volt Volt Volt Volt Previously 15.2 9.8 3.3 3.1 2.9 2.5 proposed GDI (7.22) (0.98) (0.83) (0.78) (0.73) (0.63) CMOS 21.5 15.5 6.0 5.3 4.8 2.8 (7.72) (1.55) (1.5) (1.33) (1.2) (0.7) The values in parentheses are normalized by frequencies of measurements.

Dynamic power measurements were performed for various frequencies, respectively to the voltage supply level. For a 5V supply, the measurements were performed at 12.5 MHz; for a 4.5V supply at 10 MHz; and for other supply voltages at 4 MHz.

Due to the equal delay values in both circuits (see Table 10), the normalized power-delay product has about the same values as those of power measurements. For power and power-delay product, improvements in the range of 11% to 45% were measured.

There is a difference between the simulations and measured data. The difference is caused by the fact that in all the presented circuits the simulations were performed while placing the DUT in the environment of logic circuits designed in the same technique, while in the test chip measurements the single DUT has been connected directly to output pads, causing a significantly higher load capacitance. Still, in both measured and simulated results the relative advantage of previously proposed GDI is preserved.

Previously proposed GDI implementations were also analyzed for the class of asynchronous circuits. The results presented above show that combinational previously proposed GDI circuits are fast and low power relative to CMOS and PTL implementations. C-elements and SR latches are compared with a variety of CMOS state holding circuits. A bundled-data controller and two qDI combinational logic circuits (a XOR gate and a full adder) demonstrate that systems employing previously proposed GDI components outperform standard CMOS implementations in area, power, and speed. Furthermore, previously proposed GDI components provide some enhanced hazard tolerance. All designs were validated and compared using SpectreS simulations.

C-elements are frequently used in asynchronous design. The C-element changes its output only when both inputs are identical. The output of the C-element as a function of its inputs, a and b, and the present output ĉ is:

c=″ĉ·(a+b)+a·b  (55)

The previously proposed GDI C-element was compared to the five CMOS C-element circuits shown in FIG. 33: dynamic (FIG. 33 a), conventional (FIG. 33 b), weak feedback (FIG. 33 c), static (FIG. 33 d), and symmetric (FIG. 33 e) circuits. The symmetric circuit (FIG. 33 d) has been identified by Al-Assadi et al. as the most energy-efficient and high-speed implementation from amongst the dynamic, conventional, weak feedback, and symmetric circuits.

FIG. 34 shows three previously proposed GDI implementations of the C-element. The truth table for the C-element is given in Table 12.

TABLE 12 A B C 0 0 0 0 1 no change 1 0 no change 1 1 1

The dynamic previously proposed GDI C-element (FIG. 34 a) comprises two previously proposed GDI cells with cross-connected diffusion areas. The common diffusion terminal of the previously proposed GDI cell is used both as input (B) and output (C). The outer diffusion connections of each previously proposed GDI cell are used as bi-directional terminals. The dynamic previously proposed GDI C-element employs only four transistors, as compared to six transistors in the CMOS dynamic circuit (FIG. 33 a).

The static previously proposed GDI C-element (FIG. 34 b) employs eight transistors, including four in a keeper, as compared with 10 in the static CMOS circuit (FIG. 33 d). When the two inputs carry the same value and are different from the output (A=B≠C), the conducting path from input B to the output is connected and the signal B propagates to the output. Once the output is changed (A=B=C), the path is disconnected and the output value is preserved by the keeper. At other times, if A≠B, the B-to-C path is disconnected and the output is left unchanged.

The paths from input to output in either of the abovedescribed previously proposed GDI circuits always pass through one NMOS and one PMOS transistors. In contrast, CMOS C-elements contain pull-up paths that traverse two PMOS transistors in series. This difference contributes to the lower delay of the dynamic previously proposed GDI C-element.

While the A input in both previously proposed GDI circuits drives transistor gates, the B input does not drive any gates of the previously proposed GDI cells; rather, it is only gated to the output through pass transistors. The signal path to the output is double-controlled, by the other input (A) and by the output (C). This double-control reduces the probability of output hazards. This advantage is extremely useful in asynchronous design, where the C-element is often assumed an atomic, hazard free building block (see J. Sparsø and S. Furber (eds.), Principles of asynchronous circuit design—A systems perspective, Kluwer Academic Publishers, 2001). However, due to transmission through two pass transistors, the B signal degrades by at least one V_(T). In addition, the signal needs to drive not only the load, but also the feedback inverter. Consequently, the B→C path becomes critical in the C-element. Finally, the B signal presents an increased load on the previous stage (which sources B).

This problem may be solved by buffer insertion. The buffered previously proposed GDI C-element is presented in FIG. 34 c. Here, instead of adding a two-inverter buffer at the output, the inverters are distributed inside the circuit before and after the output C. This may make the circuit more efficient, charging both external and internal gates. In addition to their amplification role, the inverters perform a swing restoration, so that no V_(T) drop is observed at the output. The buffered previously proposed GDI C-element, however, is less area efficient.

One of the common disadvantages of pass gate logic is the static current due to V_(T) drop, causing static power dissipation (as discussed by Al-Assadi et al.). However, the previously proposed GDI C-elements presented in FIG. 34 avoid this dissipation, because they are not based on a conducting path with a V_(T) drop. Once a new value has been written to the output, the keeper retains that value and all paths through the pass gates are disconnected.

Previously proposed GDI and CMOS three-input C-elements are shown in FIGS. 35 a and 35 b respectively. The three-input C-element is useful in qDI combinational logic, as will be discussed below. As explained above, the problem of a high PMOS stack in CMOS C-elements is somewhat mitigated in the previously proposed GDI circuit.

A C-element can be replaced by an SR latch when the inputs are mutually exclusive, as shown in FIG. 36. Previously proposed GDI implementations of the C-element by SR latch are presented in FIGS. 37 a and 37 b (F1 and F2 based respectively). As shown in FIG. 36, the A input is inverted, as is typically useful in asynchronous circuits. The implementation is area-efficient: The SR latch requires only two previously proposed GDI cells (four transistors).

The mutual exclusivity of the SR inputs contributes to the fact that no V_(T) drop is observed in the circuit. The drop can occur only when 0 is applied to the diffusion input of one of the previously proposed GDI cells in the F1-SR latch, or when 1 is applied to one of the previously proposed GDI cells in the F2 circuit. In each case, thanks to mutual exclusion, the second previously proposed GDI is biased as a simple inverter, and restores the voltage swing.

C-elements in common applications, such as Muller pipelines (see FIG. 38), require one inverted input. This configuration is common in asynchronous circuits, mostly applied to Acknowledge signal in the data control. While in CMOS C-elements this is achieved by adding an inverter, in previously proposed GDI the inversion can be performed by simply switching the interconnects of the diffusion nodes as shown FIG. 39. This eliminates the need for an additional inverter and reduces the delay of the Acknowledge signal in the Muller pipeline. In the case of previously proposed GDI SR latch, an inverter is removed from one of its inputs, making it an even smaller circuit.

To compare previously proposed GDI and CMOS C-elements, all previously proposed GDI and CMOS circuits were designed for a 0.35 μm technology with 3.3V supply. The circuits were simulated with the SpectreS simulator using BSIM3v3 MOSFET models with parasitic parameters. Comparisons were performed in terms of average power consumption, maximal delay and number of transistors of the circuit. FIG. 40 illustrates the simulation environment. The C-element is driven by two inverters, which are driven by ideal sources, to imitate the real environment and signals. The inverters are also useful for measuring the current flow from V_(DD) that is caused by transitions in the diffusion inputs in previously proposed GDI which sink current from the previous logic stage. The C-element drives a 100 fF load capacitor.

The shorting “x” transistors (see FIG. 33 e) are minimal size where W/L=0.35/0.35 μm. Other transistors are 1 μm/1 μm for NMOS and 4 μm/1 μm for PMOS. The weak inverter size is 1 μm/4 μm. Simulation results are presented below.

For the C-element shown in FIG. 41, the best results of average power are observed for dynamic previously proposed GDI, which require 94% less average power than the static CMOS implementation, and 80% less than the dynamic CMOS circuit (which is the best CMOS implementation in terms of power). Previously proposed GDI SR latch-based C-elements show results close to the CMOS dynamic circuit, and better than any static CMOS implementation.

In terms of maximal delay, the dynamic previously proposed GDI C-element is the fastest circuit, showing up to 89% maximal delay decrease compared to standard CMOS techniques, and a 63% improvement compared to the symmetric C-element, which is the fastest technique among CMOS circuits.

Dynamic and SR-based previously proposed GDI circuits are the most area efficient (requiring up to 33% fewer transistors than CMOS). Buffered previously proposed GDI, on the other hand, requires the highest number of transistors amongst the previously proposed GDI circuits (12 transistors).

In summary, CMOS C-elements are preferred over previously proposed GDI for some static circuits, but in other cases the dynamic previously proposed GDI C-element or the previously proposed GDI SR latch may offer a superior solution.

Simulations results for C-elements with inverted input A are presented in FIG. 41 (dark bars). While the implementation of one inverted input requires an extra inverter in CMOS C-elements, previously proposed GDI circuits either retain the same complexity or even get smaller (in the case of SR-based C-elements). This contributes to the superior performance of previously proposed GDI.

Concerning average power, previously proposed GDI offers up to 85% improvement in power dissipation compared to CMOS. This is consistent with the size reduction in SR-based circuits by elimination of the input inverter.

As for maximal delay, SR-F1, SR-F2 and the dynamic previously proposed GDI demonstrate the shortest delay among all circuits. In total the delay improvement in previously proposed GDI is in the 22%-82% range compared to CMOS.

Note that the inverted input previously proposed GDI C-element is slower than the non-inverted input one. This is due to the fact that while in the non-inverted previously proposed GDI each path through the pass-transistors contains one NMOS and one PMOS transistors, in the inverted input previously proposed GDI one of the paths goes through two PMOS transistors.

As explained above, inverted-input CMOS circuits are bigger than non-inverted ones, and the opposite is true for the SR-based previously proposed GDI circuits. Other previously proposed GDI circuits have the same size in both cases.

Comparisons between previously proposed GDI and CMOS implementations of Bundled-Data Controllers were also made, in order to demonstrate the relative advantages of previously proposed GDI over CMOS in a complex asynchronous circuit. FIG. 42 shows the filter structure and the STG flow for a Bundled-Data Filter Controller (see J. Cortadella, M. Kishinevsky, A. Kondratyev and L. Lavagno, “Introduction to asynchronous circuit design: specification and synthesis,” Tutorial, Async. Conference, 2000, contents of which are hereby incorporated by reference). The Petrify CMOS implementation of the controller is shown in FIG. 43 a. A CMOS Symmetric C-element is used in this comparison to obtain a low-power circuit.

FIG. 43 a shows a CMOS-based Bundled-Data Controller. For the previously proposed GDI circuit (FIG. 43 b), the inverted-input AND gates is replaced by previously proposed GDI OR gates and inverters. Using the previously proposed GDI OR element resulted in a reduced number of transistors, and the inverters help with swing-restoration. The inputs of the C-element are mutually exclusive, and hence it has been replaced by the smaller, faster, and lower power previously proposed GDI SR latch.

RC delay units with time constant of 0.1 ns were inserted between each Request and its corresponding Acknowledge signals, to emulate a reasonable environment.

Simulation results are shown in FIG. 44. The previously proposed GDI implementation requires only 20 transistors, as opposed to 50 in CMOS. The previously proposed GDI controller is approximately three times faster than the CMOS circuit, consuming about the same power. The reduced circuit complexity and the superior properties of the abovedescribed previously proposed GDI SR-F2 are the main contributors to the advantages of the previously proposed GDI controller.

Results are now presented for previously proposed GDI qDI combinational logic circuits. The qDI combinational logic circuit is implemented in CMOS and previously proposed GDI, according to the DR-ST design methodology (see I. David, R. Ginosar, and M. Yoeli, “An Efficient Implementation of Boolean Functions as Self-Timed Circuits,” IEEE Trans. Computers, pp. 2-11, January 1992, contents of which are hereby incorporated by reference). The n-input, m-output DR-ST circuit comprises four interconnected subnets (see FIG. 45): ORN and CEN detect when all the inputs become defined or undefined. DRN is a monotonic implementation of the dual rail combinational functions, and OUTN enforces the strong conditions (all outputs remain undefined until all inputs become defined, and all outputs remain defined as long as not all inputs have become undefined). Other qDI techniques include Delay Insensitive Minterm Synthesis (DIMS) (see R. O. Ozdag and P. A. Beerel, “High-speed QDI asynchronous pipelines,” in Proc. International Symposium on Advanced Research in Asynchronous Circuits and Systems, pp. 13-22, April 2002, contents of which are hereby incorporated by reference) and RSPCFB (see J. Sparsø and J. Straunstrup, “Delay insensitive multi-ring structures,” Integration, the VLSI journal, 15(3), 313-340, October 1993, contents of which are hereby incorporated by reference).

A simple XOR gate is used as an example. The CMOS and previously proposed GDI implementations of the ORN and DRN subnets of the XOR DR-ST gate are presented in FIG. 46 and FIG. 47 respectively. Symmetric C-elements are used for the CMOS CEN and OUTN subnets, while the previously proposed GDI implementation is based on the buffered previously proposed GDI C-element.

Three different combinations of subnet implementations are shown in FIG. 48. FIG. 48 a shows a CMOS implementation, with all four subnets as CMOS circuits. FIG. 48 b shows a previously proposed GDI implementation, with all four subnets as previously proposed GDI cells. FIG. 48 c shows a hybrid implementation, with the ORN and DRN subnets as previously proposed GDI cells, and the CEN and OUTN subnets as CMOS circuits.

Simulation results are shown in FIG. 49. The previously proposed GDI and hybrid circuits are 38% smaller than the CMOS one. The previously proposed GDI circuit is slower and consumes more power than the CMOS circuit, due to the use of buffered previously proposed GDI C-elements, which are required in this case for their drive capability. The hybrid circuit, however, consumes only half the power as CMOS while being just as fast. When hazard immunity and low supply voltage tolerance are critical, such as in low noise, low power applications, an all-previously proposed GDI circuit should be considered.

A more complex DR-ST combinational logic circuit is now presented. CMOS and Hybrid circuits of a full adder are designed and compared. The ORN and DRN subnets are presented in FIG. 50 and FIG. 51 respectively, and are either previously proposed GDI or CMOS based. (In the DRN subnet Full Adder each gate may be implemented with either CMOS or previously proposed GDI.) The CEN subnet is based on a 3-input static CMOS C-element, while OUTN comprises 2-input symmetric CMOS C-elements.

-   -   Simulation results are shown in FIG. 52. In the DR-ST         combinational logic circuit, which is relatively large compared         to the circuits described above, the hybrid implementation         outperforms CMOS in all aspects. The hybrid circuit is about         half the size and consumes only about ⅔ the power, while being         10% faster than the CMOS one.

Reference is now made to FIG. 53, which is a circuit diagram of a previously proposed GDI 1-to-2 Decoder. Decoder 5300 contains only two previously proposed GDI cells, 5310 and 5320. The two previously proposed GDI cells have their logic inputs (5312 and 5322) connected together to form the decoder logic input, their first dedicated logic terminals (5314 and 5324) tied together to form Out1, and their second dedicated logic terminals (5316 and 5326) tied together to form Out2. Decoder 5300 is a four-transistor structure that can be used as an efficient basis for implementation of low-power area-efficient decoders. Table 13 gives the decoder truth table.

TABLE 13 In Out1 Out2 ‘0’ ‘1’ ‘0’ ‘1’ ‘0’ ‘1’

Much of the abovedescribed previously proposed GDI material is presented in A. Morgenshtein, A. Fish, I. A. Wagner, “Gate-Diffusion Input (GDI)—A Novel Power Efficient Method for Digital Circuits: A Detailed Methodology,” 14th IEEE International ASIC/SOC Conference, USA, September 2001, A. Morgenshtein, A. Fish, I. A. Wagner, “Gate-Diffusion Input (GDI)—A Technique for Low Power Design of Digital Circuits: Analysis and Characterization,” ISCAS'02, USA, May 2002, A. Morgenshtein, A. Fish, I. A. Wagner, “Gate-Diffusion Input (GDI)—A Power Efficient Method for Digital Combinatorial Circuits,” IEEE Transactions on VLSI Systems, vol. 10, no. 5, October 2002, and A. Morgenshtein, M. Moreinis and R. Ginosar, “Asynchronous Gate-Diffusion-Input (GDI) Circuits”, IEEE Transactions on VLSI Systems, pp. 847-856, vol. 12, issue 8, August 2004. Contents of any books and articles given above are hereby incorporated by reference.

The previously proposed GDI technology is not generally applicable to standard CMOS transistors. The basic previously proposed GDI cell shown in FIG. 2 omits bulk connections, and is therefore useful as shown only for floating-bulk transistor technologies. In most of the examples shown above the bulk node of PMOS transistor is connected to the node P and the bulk of NMOS transistor is connected to the node N, as shown in FIG. 54, Such circuits require four-terminal transistors, and are therefore not implementable in standard n-well (or p-well) CMOS technology. Only certain special cases of GDI circuits, such as F1 and F2 (see Table 1), can be implemented with standard CMOS technologies (n-well CMOS and p-well CMOS technology respectively).

For these reasons the logic circuits based on previously proposed GDI logic elements using standard CMOS transistors must be based on either the F1 or the F2 function. Unnecessary constraints and complexity are thus introduced into the logic circuit design. Additionally, if the F1 function is implemented in a standard n-well CMOS technology, a separate well for every PMOS transistor of each F1 cell is required, making the implementation area non-efficient. The same problem exists when F2 is implemented in p-well CMOS technology. In this case, a separate well for every NMOS transistor of each F2 cell is required, making the implementation non-efficient in terms of area occupation.

There is thus a widely recognized need for, and it would be highly advantageous to have, a digital logic circuit devoid of the above limitations.

SUMMARY OF THE INVENTION

According to a first aspect of the present invention there is provided a complementary logic cell contains a first logic input, a second logic input, a first dedicated logic terminal, a second dedicated logic terminal, a high-voltage terminal configured for connection to a high constant voltage a low-voltage terminal configured for connection to a low constant voltage, a p-type transistor, and an n-type transistor. The p-type transistor has an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection. The n-type transistor has an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection. The first dedicated logic terminal is connected to the outer diffusion connection of the p-type transistor, the second dedicated logic terminal is connected to the outer diffusion connection of the n-type transistor, the inner diffusion connection of the p-type transistor and the inner diffusion connection of the n-type transistor is connected to form a common diffusion logic terminal, the high-voltage terminal is connected to the bulk connection of the p-type transistor, and the low-voltage terminal is connected to the bulk connection of the n-type transistor.

According to a second aspect of the present invention there is provided a complementary logic circuit containing a first logic input, a second logic input, a first dedicated logic terminal, a second dedicated logic terminal, a high-voltage terminal configured for connection to a high constant voltage, a low-voltage terminal configured for connection to a low constant voltage, a first logic block, and a second logic block. The first logic block consists of a network of p-type transistors for implementing a predetermined logic function. The p-type transistor network has an outer diffusion connection, a first network gate connection, an inner diffusion connection, and a bulk connection. The outer diffusion connection of the p-type transistor network is connected to the first dedicated logic terminal, and the first network gate connection of the p-type transistor network is connected to the first logic input. The second logic block consists of a network of n-type transistors which implements a logic function complementary to the logic function implemented by the first logic block. The n-type transistor network has an outer diffusion connection, a first network gate connection, an inner diffusion connection, and a bulk connection. The outer diffusion connection of the n-type transistor network is connected to the second dedicated logic terminal, and the first network gate connection of the n-type transistor network is connected to the second logic input. The bulk connection of the p-type transistor network is connected to the high-voltage terminal, and the bulk connection of the n-type transistor network is connected to the low-voltage terminal. The inner diffusion connections of the p-type network and of the n-type network are connected together to form a common diffusion logic terminal.

Preferably, the first and second logic inputs are connected to form a first common logic input.

Preferably, each of the logic terminals is separately configurable to serve as a logic input.

Preferably, each of the logic terminals is separately configurable to serve as a logic output.

Preferably, the logic circuit further contains a third logic input connected to a second network gate connection of the p-type transistor network.

Preferably, the logic circuit further contains a fourth logic input connected to a second network gate connection of the n-type transistor network.

Preferably, the third and fourth logic inputs are connected to form a second common logic input.

Preferably, the p-type transistor network comprises a single p-type transistor.

Preferably, the n-type transistor network comprises a single n-type transistor.

Preferably, the network of p-type transistors comprises one of a group of networks comprising: a network of p-type field effect transistors (FET), a network of p-type p-well complementary metal-oxide semiconductor (CMOS) transistors, a network of p-type n-well complementary metal-oxide semiconductor (CMOS) transistors, a network of p-type twin-well complementary metal-oxide semiconductor (CMOS) transistors, a network of p-type silicon on insulator (SOI) transistors, and a network of p-type silicon on sapphire (SOS) transistors.

Preferably, the network of n-type transistors comprises one of a group of networks comprising: a network of n-type FETs, a network of n-type p-well CMOS transistors, a network of n-type n-well CMOS transistors, a network of n-type twin-well CMOS transistors, a network of n-type SOI transistors, and a network of n-type SOS transistors.

Preferably, the logic circuit comprises one of a group of the following logic circuits: an OR gate, an inverted OR (NOR) gate, an AND gate, a multiplexer gate, an inverter gate, and an exclusive OR (XOR) gate.

Preferably, the logic circuit is operable to implement a ((NOT A) OR B) logic operation upon logic inputs A and B.

Preferably, the logic circuit is operable to implement a ((NOT A) AND B) logic operation upon logic inputs A and B.

According to a third aspect of the present invention there is provided a logic circuit consisting of interconnected logic elements. Each of the logic elements contains a first logic input, a second logic input, a first dedicated logic terminal, a second dedicated logic terminal, a high-voltage terminal configured for connection to a high constant voltage, a low-voltage terminal configured for connection to a low constant voltage, a p-type transistor having an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection, and an n-type transistor having an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection. The outer diffusion connection of the p-type transistor is connected to the first dedicated logic terminal, and the gate connection of the p-type transistor is connected to the first logic input. The outer diffusion connection of the n-type transistor is connected to the second dedicated logic terminal, and the gate connection of the n-type transistor network is connected to the second logic input. The inner diffusion connections of the p-type and the n-type transistors are connected together to form a common diffusion logic terminal. The bulk connection of the p-type transistor is connected to the high-voltage terminal, and the bulk connection of the n-type transistor is connected to the low-voltage terminal.

Preferably, for each of logic elements the first and second logic inputs are connected to form a common logic input.

Preferably, for each of logic elements each of the logic terminals is separately configurable to serve as a logic input.

Preferably, for each of logic elements each of the logic terminals is separately configurable to serve as a logic output.

Preferably, the type of the p-type transistors comprises one of a group of transistor types comprising: p-type FET transistors, p-type p-well CMOS transistors, p-type n-well CMOS transistors, p-type twin-well CMOS transistors, p-type SOI transistors, and p-type SOS transistors.

Preferably, the type of n-type transistors comprises one of a group of transistor types comprising: n-type FET transistors, n-type p-well CMOS transistors, n-type n-well CMOS transistors, n-type twin-well CMOS transistors, n-type SOI transistors, and n-type SOS transistors.

Preferably, the logic circuit is one of a group of logic circuits including: an OR gate, an inverted OR (NOR) gate, an AND gate, a multiplexer gate, an inverter gate, and an exclusive OR (XOR) gate.

Preferably, the logic circuit is operable to implement a ((NOT A) OR B) logic operation upon logic inputs A and B.

Preferably, the logic circuit is operable to implement a ((NOT A) AND B) logic operation upon logic inputs A and B.

Preferably, the logic circuit further contains at least one stabilizing buffer element.

Preferably, the logic circuit further contains at least one inverter.

Preferably, the logic circuit comprises a C-element.

Preferably, the logic circuit comprises a latch.

Preferably, the logic circuit is one of a group of logic circuits including: an SR latch, a D latch, a T latch, and a toggle flip-flop (TFF).

Preferably, the logic circuit comprises a bundle data filter controller.

Preferably, the logic circuit comprises a one to two decoder.

Preferably, the logic circuit is one of a group of logic circuits including: a carry-lookahead adder (CLA), a ripple adder, a combined ripple-CLA adder, a ripple comparator, a multiplier, and a counter.

According to a fourth aspect of the present invention there is provided a logic circuit, consisting of interconnected logic elements. Each of the logic elements contains a first logic input, a second logic input, a first dedicated logic terminal, a second dedicated logic terminal, a high-voltage terminal configured for connection to a high constant voltage, a low-voltage terminal configured for connection to a low constant voltage, a first logic block, and a second logic block. The first logic block consists of a network of p-type transistors for implementing a predetermined logic function. The p-type transistor network has an outer diffusion connection, a first network gate connection, an inner diffusion connection, and a bulk connection. The outer diffusion connection of the p-type transistor network is connected to the first dedicated logic terminal, and the first network gate connection of the p-type transistor network is connected to the first logic input. The second logic block consists of a network of n-type transistors which implements a logic function complementary to the logic function implemented by the first logic block. The n-type transistor network has an outer diffusion connection, a first network gate connection, an inner diffusion connection, and a bulk connection. The outer diffusion connection of the n-type transistor network is connected to the second dedicated logic terminal, and the first network gate connection of the n-type transistor network is connected to the second logic input. The inner diffusion connections of the p-type network and of the n-type network are connected together to form a common diffusion logic terminal. The bulk connection of the p-type transistor network is connected to the high-voltage terminal, and the bulk connection of the n-type transistor network is connected to the low-voltage terminal.

Preferably, for each of the logic elements the first and second logic inputs are connected to form a first common logic input.

Preferably, for each of the logic elements each of the logic terminals is separately configurable to serve as a logic input.

Preferably, for each of the logic elements each of the logic terminals is separately configurable to serve as a logic output.

Preferably, the logic circuit further contains a third logic input connected to a second network gate connection of the p-type transistor network.

Preferably, the logic circuit further contains a fourth logic input connected to a second network gate connection of the n-type transistor network.

Preferably, the third and fourth logic inputs are connected to form a second common logic input.

Preferably, the p-type transistor network comprises a single p-type transistor.

Preferably, the n-type transistor network comprises a single n-type transistor.

Preferably, the network of p-type transistors comprises one of a group of networks comprising: a network of p-type field effect transistors (FET), a network of p-type p-well complementary metal-oxide semiconductor (CMOS) transistors, a network of p-type n-well complementary metal-oxide semiconductor (CMOS) transistors, a network of p-type twin-well complementary metal-oxide semiconductor (CMOS) transistors, a network of p-type silicon on insulator (SOI) transistors, and a network of p-type silicon on sapphire (SOS) transistors.

Preferably, the network of n-type transistors comprises one of a group of networks comprising: a network of n-type FETs, a network of n-type p-well CMOS transistors, a network of n-type n-well CMOS transistors, a network of n-type twin-well CMOS transistors, a network of n-type SOI transistors, and a network of n-type SOS transistors.

Preferably, the logic circuit further contains at least one buffer element.

Preferably, the logic circuit further contains at least one inverter.

According to a fifth aspect of the present invention there is provided a method for designing a logic circuit for performing a given logic function. The logic circuit to be constructed from interconnected logic elements. Each of the logic elements contains a first logic input, a second logic input, a first dedicated logic terminal, a second dedicated logic terminal, a high-voltage terminal configured for connection to a high constant voltage, a low-voltage terminal configured for connection to a low constant voltage, a p-type transistor having an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection, and an n-type transistor having an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection. The outer diffusion connection of the p-type transistor is connected to the first dedicated logic terminal, and the gate connection of the p-type transistor is connected to the first logic input. The outer diffusion connection of the n-type transistor is connected to the second dedicated logic terminal, and the gate connection of the n-type transistor is connected to the second logic input. The inner diffusion connections of the p-type and the n-type transistors are connected together to form a common diffusion logic terminal. The bulk connection of the p-type transistor is connected to the high-voltage terminal, and the bulk connection of the n-type transistor is connected to the low-voltage terminal. The method is performed by setting a synthesized function equal to the given logic function, and performing a synthesis recursion cycle. The synthesis recursion cycle consists of the following steps: if the synthesized function comprises a single non-inverted logic variable, providing a logic circuit design comprising an input terminal for the non-inverted logic variable and discontinuing the synthesis recursion cycle; if the synthesized function comprises a high logic signal, providing a logic circuit design comprising a connection to a high logic level, and discontinuing the synthesis recursion cycle; if the synthesized function comprises a low logic signal, providing a logic circuit design comprising a connection to a low logic level, and discontinuing the synthesis recursion cycle; and if the synthesized function comprises either an inverted single variable or a multi-variable function, performing the following sequence of steps. The sequence of steps is: extracting a first logic function, and a second logic function from a Shannon expansion of the synthesized function for a selected logic variable; setting the synthesized function to the first logic function; performing a synthesis recursion cycle to obtain a circuit design for a first sub-circuit; setting the synthesized function to the second logic function; performing a synthesis recursion cycle to obtain a circuit design for a second sub-circuit; providing a logic circuit design comprising a logic element having an input terminal for the selected logic variable at a common terminal of a logic element, an output of the first sub-circuit connected to the first dedicated logic terminal of the logic element, an output of the second sub-circuit connected to the second dedicated logic terminal of the logic element, and a circuit output at the common diffusion logic terminal of the logic element; and discontinuing the synthesis recursion cycle.

Preferably, extracting a first logic function, and a second logic function from a Shannon expansion of the synthesized function for a selected logic variable consists of: extracting the first logic function from the synthesized function by setting the selected variable to a logic high in the synthesized function; and extracting the second logic function from the synthesized function by setting the selected variable to a logic low in the synthesized function.

Preferably, the method contains the further step of adding a buffer to the circuit design to provide stabilization for a logic signal.

Preferably, the method contains the further step of adding an inverter to the circuit design to provide stabilization for a logic signal.

According to a sixth aspect of the present invention there is provided a method for providing a logic circuit. Each of the logic elements contains a first logic input, a second logic input, a first dedicated logic terminal, a second dedicated logic terminal, a high-voltage terminal configured for connection to a high constant voltage, a low-voltage terminal configured for connection to a low constant voltage, a p-type transistor having an outer diffusion connection, a gate connection, an inner diffusion connection , and a bulk connection, and an n-type transistor having an outer diffusion connection, a gate connection, an inner diffusion connection , and a bulk connection. The outer diffusion connection of the p-type transistor is connected to the first dedicated logic terminal, and the gate connection of the p-type transistor is connected to the first logic input. The outer diffusion connection of the n-type transistor is connected to the second dedicated logic terminal, and the gate connection of the n-type transistor is connected to the second logic input. The inner diffusion connections of the p-type and the n-type transistors are connected together to form a common diffusion logic terminal. The bulk connection of the p-type transistor is connected to the high-voltage terminal, and the bulk connection of the n-type transistor is connected to the low-voltage terminal. First a logic circuit design is obtained by setting a synthesized function equal to the required logic function, and performing a synthesis recursion cycle. The synthesis recursion cycle consists of the following steps: if the synthesized function comprises a single non-inverted logic variable, providing a logic circuit design comprising an input terminal for the non-inverted logic variable and discontinuing the synthesis recursion cycle; if the synthesized function comprises a high logic signal, providing a logic circuit design comprising a connection to a high logic level, and discontinuing the synthesis recursion cycle; if the synthesized function comprises a low logic signal, providing a logic circuit design comprising a connection to a low logic level, and discontinuing the synthesis recursion cycle; and if the synthesized function comprises either an inverted single variable or a multi-variable function, performing the following sequence of steps. The sequence of steps is: extracting a first logic function, and a second logic function from a Shannon expansion of the synthesized function for a selected logic variable; setting the synthesized function to the first logic function; performing a synthesis recursion cycle to obtain a circuit design for a first sub-circuit; setting the synthesized function to the second logic function; performing a synthesis recursion cycle to obtain a circuit design for a second sub-circuit; providing a logic circuit design comprising a logic element having an input terminal for the selected logic variable at a common terminal of a logic element, an output of the first sub-circuit connected to the first dedicated logic terminal of the logic element, an output of the second sub-circuit connected to the second dedicated logic terminal of the logic element, and a circuit output at the common diffusion logic terminal of the logic element; and discontinuing the synthesis recursion cycle. After obtaining the logic circuit design, the logic elements are connected in accordance with the obtained design.

Preferably, extracting a first logic function, and a second logic function from a Shannon expansion of the synthesized function for a selected logic variable consists of: extracting the first logic function from the synthesized function by setting the selected variable to a logic high in the synthesized function; and extracting the second logic function from the synthesized function by setting the selected variable to a logic low in the synthesized function.

Preferably, the method contains the further step of adding a buffer to the circuit design to provide stabilization for a logic signal.

Preferably, the method contains the further step of adding an inverter to the circuit design to provide stabilization for a logic signal.

The present invention successfully addresses the shortcomings of the presently known configurations by providing a fast and versatile logic circuit, with reduced area and power requirements, and capable of implementing a wide variety of logic functions and utilizing a wide variety of transistor technologies.

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Although methods and materials similar or equivalent to those described herein can be used in the practice or testing of the present invention, suitable methods and materials are described below. In the case of conflict, the patent specification, including definitions, will control. In addition, the materials, methods, and examples are illustrative only and not intended to be limiting.

Implementation of the method and system of the present invention involves performing or completing selected tasks or steps manually, automatically, or a combination thereof. Moreover, according to actual instrumentation and equipment of preferred embodiments of the method and system of the present invention, several selected steps could be implemented by hardware or by software on any operating system of any firmware or a combination thereof. For example, as hardware, selected steps of the invention could be implemented as a chip or a circuit. As software, selected steps of the invention could be implemented as a plurality of software instructions being executed by a computer using any suitable operating system. In any case, selected steps of the method and system of the invention could be described as being performed by a data processor, such as a computing platform for executing a plurality of instructions.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is herein described, by way of example only, with reference to the accompanying drawings. With specific reference now to the drawings in detail, it is stressed that the particulars shown are by way of example and for purposes of illustrative discussion of the preferred embodiments of the present invention only, and are presented in the cause of providing what is believed to be the most useful and readily understood description of the principles and conceptual aspects of the invention. In this regard, no attempt is made to show structural details of the invention in more detail than is necessary for a fundamental understanding of the invention, the description taken with the drawings making apparent to those skilled in the art how the several forms of the invention may be embodied in practice.

In the drawings:

FIG. 1 is a simplified block diagram of a previously proposed logic circuit. FIG. 2 is a simplified circuit diagram of a previously proposed Gate Diffusion Input (GDI) logic cell.

FIG. 3 is a previously proposed GDI circuit diagram and transient response when a step signal is applied to the outer diffusion node of an NMOS transistor.

FIG. 4 shows Cadence Spectre simulation results for sub-threshold operation of a previously proposed GDI AND gate.

FIG. 5 is a representation of a previously proposed GDI cascade as an RC tree.

FIG. 6 is a circuit diagram of a previously proposed GDI inverter along with its equivalent digital model.

FIG. 7 is a circuit diagram of a prior-art CMOS NAND gate, along with its equivalent digital model.

FIG. 8 is a simplified circuit diagram of a previously proposed logic cell having separate common logic terminals.

FIG. 9 is a simplified circuit diagram of a latch based upon the previously proposed GDI* cell.

FIGS. 10 a-10 e are simplified circuit diagrams of previously proposed GDI based latches.

FIG. 11 is a simplified block diagram of a previously proposed multi-transistor GDI logic circuit.

FIG. 12 shows a prior-art 3-input CMOS structure and the corresponding previously proposed 5-input GDI cell.

FIG. 13 is a simplified block diagram of a previously proposed extended GDI cell.

FIG. 14 is a simplified flowchart of a recursive algorithm for implementing any logic function by GDI cells.

FIG. 15 is a simplified flowchart of a method for designing a logic circuit.

FIG. 16 is a simplified flowchart of a method for extracting the first and second logic functions from a given function.

FIG. 17 is a simplified flowchart of a method for providing a GDI logic circuit.

FIGS. 18 a, 18 b, and 18 c show previously proposed GDI XOR, AND, and OR gates respectively, and their prior-art equivalents in CMOS, TG, and NMOS Pass-Gate (N-PG) technologies.

FIGS. 19( a-f) show power and delay results for previously proposed GDI OR and AND gates, and for prior-art CMOS, and PTL gates.

FIGS. 20( a-f) show implemented previously proposed GDI cells and cell layouts for basic functions for a regular p-well process.

FIGS. 21 a and 21 b shows generic prior-art carry-lookahead adders.

FIG. 22 shows a prior-art four-bit ripple comparator consisting of a cascade of 4 identical basic units.

FIG. 23 shows the structure of a prior-art 4-bit multiplier.

FIG. 24 shows a prior-art basic multiplier cell.

FIGS. 25 a and 25 b shows layouts for a previously proposed GDI 8-bit CLA adder circuits, and prior-art TG and CMOS circuits.

FIG. 26 shows simulation results for a previously proposed GDI 8-bit adder vs. prior-art CMOS and TG.

FIG. 27 shows a layout of a previously proposed GDI 8-bit comparator chip.

FIG. 28 shows simulation results for a previously proposed GDI 8-bit comparator.

FIG. 29 shows power, results as function of a for a previously proposed GDI 4-bit comparator.

FIG. 30 shows delay results as function of a for a previously proposed GDI 4-bit comparator.

FIG. 31 shows power-delay results as function of a for a previously proposed GDI 4-bit comparator.

FIG. 32 is a photograph of a previously proposed GDI test chip.

FIGS. 33 a-33 e shows five prior-art CMOS C-element circuits.

FIG. 34 a-34 c shows three previously proposed GDI implementations of the C-element.

FIGS. 35 a and 35 b show implementations of a three-input C-element for prior-art CMOS and previously proposed GDI architectures respectively.

FIG. 36 shows a prior-art representation of a C-element by an SR-latch.

FIGS. 37 a and 37 b shows previously proposed GDI SR-latch circuits.

FIG. 38 shows the prior-art Muller pipeline structure.

FIG. 39 shows a previously proposed GDI implementation of a dynamic C-element with inverted input.

FIG. 40 shows the simulation environment for a previously proposed GDI C-element.

FIGS. 41 (a-c) show the simulation results for prior-art and previously proposed GDI C-elements.

FIG. 42 shows prior-art filter structure and the STG flow for a Bundled-Data Filter Controller.

FIGS. 43 a and 43 b show prior-art implementations of a Bundled-Data Filter Controller.

FIG. 44 shows simulation results for previously proposed GDI and CMOS Bundled-Data Filter Controller.

FIG. 45 shows the general structure of a prior-art DR-ST implementation of a qDI combinational logic circuit.

FIG. 46 shows prior-art CMOS and previously proposed GDI implementations of the ORN subnet.

FIG. 47 shows prior-art CMOS and previously proposed GDI implementations of the XOR DRN subnet.

FIG. 48 a-c shows three simulated previously proposed GDI circuits based on different combinations of ORN and DRN subnets.

FIG. 49 shows simulation results for previously proposed GDI DR-ST XOR circuits.

FIG. 50 shows circuit diagrams for previously proposed GDI ORN subnet Full Adders.

FIG. 51 shows prior-art logic diagrams for DRN subnet Full Adders.

FIG. 52 shows performance results for previously proposed GDI DR-ST Full Adders.

FIG. 53 is a circuit diagram of a previously proposed GDI 1-to-2 Decoder.

FIG. 54 shows a previously proposed GDI cell with bulk connections.

FIG. 55 is a simplified circuit diagram of a GDI⁺ logic cell, according to a preferred embodiment of the present invention.

FIG. 56 shows possible voltage drops in the GDI⁺ cell for good input voltage levels at input A.

FIG. 57 shows GDI⁺ cells connected through the diffusion inputs.

FIG. 58 shows GDI⁺ cells connected through both gate and diffusion inputs.

FIG. 59 shows F1⁺ and F2⁺ functions connected through the gate inputs.

FIG. 60 shows a generalized GDI⁺ cell followed by a buffer GDI⁺ cell for signal restoration.

FIG. 61 shows a logic circuit with GDI⁺ cells with different threshold voltages.

FIG. 62 shows an example of a circuit configured in accordance with the present methodology.

FIG. 63 is a circuit diagram of a GDI⁺1-to-2 Decoder, according to a preferred embodiment of the present invention.

FIG. 64 is a circuit diagram of a GDI⁺3-to-8 decoder, according to a preferred embodiment of the present invention.

FIG. 65 a shows a logic path driving a long interconnect wire. FIG. 65 b shows repeater insertion on the long interconnect.

FIG. 65 c illustrates Logic Gates as Repeaters (LGR) concept with distributed logic gates over the interconnect.

FIG. 66 shows a circuit using GDI⁺ cells as repeaters.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The rapid development of digital applications has created a demand for faster logic circuits, having compact implementation and low power dissipation. Traditional CMOS methods, and other technologies, such as PTL, have been unable to satisfy this demand. The present invention is of a low area, power-efficient logic circuit design, referred to below as generalized gate-diffusion input (GDI⁺), which can be used to implement a wide variety of logic functions.

In the GDI⁺ cell, the bulk node of PMOS transistor is connected to the high constant voltage (referred to herein as supply voltage or V_(DD)) and the bulk of NMOS transistor is connected to low constant voltage (referred to herein as GND). This way the proposed cell is fully compatible for implementation in a standard CMOS technology, where bulks of all PMOS transistors are connected to V_(DD) and bulks of all NMOS transistors are connected to GND.

The GDI⁺ cell uses standard four-terminal NMOS and PMOS transistors and can be easily implemented in any kind of standard CMOS technology. The GDI⁺ cell can also be implemented in all kinds of non-standard technologies, like twin-well CMOS technology, Silicon on Insulator (SOI) technology and Silicon on Sapphire (SOS) technology.

The principles and operation of a logic circuit according to the present invention may be better understood with reference to the drawings and accompanying descriptions.

Before explaining at least one embodiment of the invention in detail, it is to be understood that the invention is not limited in its application to the details of construction and the arrangement of the components set forth in the following description or illustrated in the drawings. The invention is capable of other embodiments or of being practiced or carried out in various ways. Also, it is to be understood that the phraseology and terminology employed herein is for the purpose of description and should not be regarded as limiting.

Reference is now made to FIG. 55 which is a simplified circuit diagram of a GDI⁺ logic cell, according to a preferred embodiment of the present invention. In contrast with the previously proposed GDI cell, GDI⁺ cell 5500 includes a low-voltage terminal 5580 configured to be connected to a high constant voltage (i.e. supply voltage) and a high-voltage terminal 5570 configured to be connected to a low constant voltage (i.e. Ground). Including terminals 5570 and 5580 ensures that the GDI⁺ cell can be implemented with all current CMOS technologies.

Logic circuit 5500 contains p-type transistor 5510, n-type transistor 5520, common logic input (G) 5530, first dedicated logic terminal (P) 5540, second dedicated logic terminal (N) 5550, common diffusion logic terminal (D) 5560, low-voltage terminal 5580, and high-voltage terminal 5570. The p-type transistor 5510 has four connections: an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection. Similarly, the n-type transistor 5520 has four connections: an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection. The GDI⁺ cell has a common input terminal (G) 5530 connected to the gates of both the n-type and p-type transistors, a first dedicated logic terminal (P) 5540 at the outer diffusion node of the p-type transistor, and a second dedicated logic terminal (N) 5550 at the outer diffusion node of the n-type transistor 5520. The common diffusion logic terminal (D) 5560 is connected to the inner diffusion nodes of both transistors. Additionally, GDI⁺ cell 5500 the low-voltage terminal 5580 is connected to the bulk connection of p-type transistor 5510 and high-voltage terminal 5570 is connected to the bulk connection of n-type transistor 5520. The first and second dedicated logic terminals, 5550 and 5540, and the common diffusion logic terminal 5560 can each serve as either a logic signal input terminal or a logic signal output terminal, depending upon the specific logic circuit implementation.

In an alternate preferred embodiment (not shown), a first logic input is connected to the gate of the p-type transistor network and a second logic input is connected to the gate of the n-type transistor network forming a GDI*⁺ cell parallel to the previously proposed GDI* cell shown in FIG. 8.

All of the GDI circuit configurations and methods described above may be implemented by substituting GDI cells for the previously proposed GDI (or GDI*) cell. An abovedescribed GDI circuit implemented with GDI⁺ cells is indicated herein as a “generalized” GDI circuit.

The generalized GDI⁺ allows effective buffer insertion between GDI⁺ cells. The direct profit of the reduced number of buffers are area saving and cost reduction. Generally, buffer insertion between GDI⁺ cells is required to restore signal levels causing by threshold voltage (V_(TH)) dropping. Thus, the buffer should be inserted in each case, where logic signal dropping is expected to be larger than allowed. On the other hand, there is no reason to insert buffers in cases where additional GDI⁺ cells can be connected without exceeding the allowed voltage drop.

FIG. 56 shows possible voltage drops in the GDI⁺ cell, assuming input A receives good input voltage levels (GND for A=‘0’ and V_(DD) for A=‘1’). This is the worst case since a high voltage signal is driven through the NMOS transistor and a low voltage signal is driven through the PMOS transistor.

The voltage drop at the output Out₁ can be caused by two reasons:

-   -   a. When A=‘1’ and V_(DD) is driven to Out₁ through the NMOS         transistor, the maximum value that Out₁ can reach is         Out₁˜V_(DD)−V_(TH) (instead of the desired Out₁=V_(DD)).         Generally, the maximum value of Out₁ in this case is determined         by: ˜min {V_(DD), V_(A)−V_(TH)}, where V_(A) is the voltage         value at node A. In the case of A=V_(DD), the maximum value of         Out₁=V_(DD)−V_(TH). Note, that in this case the Out₁ node         represents the source node of the NMOS transistor (and not as in         the regular CMOS design methodology, where the output node         usually represents the drain of the NMOS transistor).     -   b. When A=‘0’ and GND is driven to Out₁ through the PMOS         transistor, the minimum value that Out₁ can reach is         Out₁˜V_(TH). Generally, the minimum value of Out₁ in this case         is determined by: ˜max {GND, V_(A)+V_(TH)}, where V_(A) is the         voltage value at node A. In the case of A=GND, the minimum value         of Out₁=V_(TH). Note, that in this case the node Out₁ represents         the source node of PMOS transistor (and not as in the regular         CMOS design methodology, where the output node usually         represents the drain of the PMOS transistor).

FIG. 57 shows a possible connection between GDI⁺ cells through the diffusion inputs. In this case the outputs of GDI⁺ ₁ and GDI⁺ ₂ are connected to the diffusion inputs of GDI⁺ ₃. Assuming that inputs A_(i) of all the GDI⁺ cells receive good voltage levels (GND for A=‘0’ and V_(DD) for A=‘1’), the voltage ranges of output signals Out₁ and Out₂ are the same as was described for GDI⁺ cell in FIG. 55. The output levels at Out₁ and Out₂ serve as the input levels to the GDI⁺ ₃ diffusion inputs.

In order to check the voltage drop at the output of GDI⁺ ₃ cell, four cases will be examined. In all these cases we assume that the output of the previous GDI⁺ cell was affected by the V_(TH) voltage drop. Thus, these four cases are the worst cases, where the GDI⁺ cells are connected through diffusion inputs and assuming good signal levels at the Gates (A, inputs) nodes. The fours cases are as follows:

-   -   a. A₃=‘1’ and the worst low level is obtained at Out₂ (A₂         =‘0’=>Out ₂=V_(TH)): V_(TH) is driven to Out₃ through the NMOS         transistor of GDI⁺ ₃. This is a “natural” case where the low         signal level is driven through the NMOS transistor (like in a         standard CMOS methodology). In this case, the minimum level of         Out₃ is determined by the level of Out₂, resulting in         Out₃=V_(TH).     -   b. A₃=‘1’ and the worst high level is obtained at Out₂         (A₂=‘1’=>Out₂=V_(DD)−V_(TH)): V_(DD)−V_(TH) is driven to Out₃         through the NMOS transistor of GDI⁺ ₃. The maximum level of Out₃         in this case is determined by: ˜min {Out₂, V_(A)−V_(TH)}, where         V_(A) is the voltage level at node A. When A=V_(DD),         Out₂=V_(DD)−V_(TH), so that the maximum level of Out₃ is         determined by: ˜min {V_(DD)−V_(TH), V_(DD)−V_(TH)}, resulting in         Out₃=V_(DD)−V_(TH). Note, that in this case Out₃ represents the         source node of the NMOS transistor of the GDI⁺ ₃ cell (and not         as in the regular CMOS design methodology, where the output node         usually represents the drain of the NMOS transistor).     -   c. A₃=‘0’ and the worst high level is obtained at Out₁         (A₁=‘1’=>Out₁=V_(DD)−V_(TH)): V_(DD)−V_(TH) is driven to Out₃         through the PMOS transistor of GDI⁺ ₃. This is a “natural” case         where the high signal level is driven through the PMOS         transistor (like in a standard CMOS methodology). In this case,         the maximum level of Out₃ is determined by the level of Out₁,         resulting in Out₃=V_(DD)−V_(TH).     -   d. A₃=‘0’ and the worst low level is obtained at Out₁ (A₁         =‘0’=>Out ₁=V_(TH)): V_(TH) is driven to Out₃ through the PMOS         transistor of GDI⁺ ₃. The minimum level of Out₃ in this case is         determined by: ˜max {Out₁, V_(A)+V_(TH)} where V_(A) is the         voltage level at node A. When A=GND, Out₁=V_(TH), so that the         minimum level of Out₃ is determined by: ˜max {V_(TH), V_(TH)},         resulting in Out₁=V_(TH). Note, that in this case Out₃         represents the source node of the PMOS transistor of the GDI⁺ ₃         cell (and not as in the regular CMOS design methodology, where         the output node usually represents the drain of the PMOS         transistor).

According to these four cases, the output voltage levels of the GDI⁺ ₃ cell range between V_(TH) and VDD−V_(TH), similar to the outputs of GDI⁺ ₁ and GDI⁺ ₂ cells. In conclusion, if N GDI⁺ cells are connected together through the diffusion inputs and assuming good digital levels at the gates of all GDI⁺ cells, the maximum voltage drop at the output of the last cell equals to V_(TH), both in the case of low digital levels (denoted herein ‘0’) and in the case of a high digital levels (denoted herein ‘1’).

FIG. 58 shows a possible interconnection between GDI⁺ cells through both gate and diffusion inputs. In this case, the outputs of GDI⁺ ₁ and GDI⁺ ₂ are connected to the diffusion inputs of GDI⁺ ₃ and the output of GDI⁺ ₄ is connected to the gate input of GDI⁺ ₃. Assuming that inputs A₁, A₂, and A₄ receive good voltage levels (GND for A=‘0’ and V_(DD) for A=‘1’), the voltage ranges of output signals Out₁, Out₂, and Out₄ are the same as was described for the GDI⁺ cell in FIG. 56, and all of them are input signals of the GDI⁺ ₃ cell.

In order to check the voltage drop at the output of GDI⁺ ₃, four cases will be examined. Similarly to the explanation of the voltage drop in GDI⁺ cells of FIG. 57, in all these cases we assume that the output of the previous GDI⁺ cell was affected by the V_(TH) voltage drop. Thus, these four cases are worst cases, where the GDI⁺ ₃ cell diffusion and gate inputs are all affected by the V_(TH) voltage drop. The fours cases are as follows:

-   -   a. Out₄ has a high digital level (which is affected by the         voltage drop, giving Out₄=V_(DD)−V_(TH)) and Out₂ is at the         worst low level (A₂=‘0’=>Out₂=V_(TH)): V_(TH) is driven to Out₃         through the NMOS transistor of GDI⁺ ₃. This is a “natural” case         where the low signal level is driven through the NMOS transistor         (like in a standard CMOS methodology). In this case, minimum         level of Out₃ is determined by the level of Out₂, resulting in         Out₃=V_(TH).     -   b. Out₄ has a high digital level (which is affected by the         voltage drop, giving Out₄=V_(DD)−V_(TH)) and Out₂ is at the         worst high level (A₂=‘1’=>Out₂=V_(DD)−V_(TH)). V_(DD)−V_(TH) is         driven to Out₃ through the NMOS transistor of GDI⁺ ₃. The         maximum level of Out₃ in this case is determined by: ˜min {Out₂,         Out₄−V_(TH)}. In this case Out₄=V_(DD)−V_(TH),         Out₂=V_(DD)−V_(TH), so the maximum level of Out₄ is determined         by: ˜min {V_(DD)−V_(TH), V_(DD)−2*V_(TH)}, resulting in         Out₁=V_(DD)−2*V_(TH). Note that in this case the Out₃ node         represents the source node of the NMOS transistor of GDI⁺ ₃ (and         not as in the regular CMOS design methodology, where the output         node usually represents the drain of the NMOS transistor).     -   c. Out₄ has a low digital level (which is affected by the         voltage drop, giving Out₄=V_(TH)) and Out₁ is at the worst high         level (A_(i)=‘1’=>Out₁=V_(DD)−V_(TH)): V_(DD)−V_(TH) is driven         to Out₃ through the PMOS transistor of GDI⁺ ₃. This is a         “natural” case where the high signal level is driven through the         PMOS transistor (like in a standard CMOS methodology). In this         case, maximum level of Out₃ is determined by the level of Out₁,         resulting in Out₄=V_(DD)−V_(TH).     -   d. Out₄ has a low digital level (which is affected by the         voltage drop, giving Out₄=V_(TH)) and Out₁ is at the worst low         level (A₁=‘0’=>Out₁=V_(TH)): V_(TH) is driven to Out₃ through         the PMOS transistor of GDI⁺ ₃. The minimum level of Out₄ in this         case is determined by: ˜max {Out_(s), Out₄+V_(TH)}. When         Out₄=V_(TH) and Out₁=V_(TH), the minimum level of Out₄ is         determined by: ˜max {V_(TH), 2*V_(TH)}, resulting in         Out₁=2*V_(TH). Note, that in this case Out₃ represents the         source node of the PMOS transistor of GDI⁺ ₃ (and not as in the         regular CMOS design methodology, where the output node usually         represents the drain of the PMOS transistor).

As shown by these four cases, the output voltage level of the GDI⁺ ₄ cell ranges between 2*V_(TH) and V_(DD)−2*V_(TH). In conclusion, if N GDI⁺ cells are connected together through the Gate inputs, and assuming the diffusion inputs to these GDI⁺ cells are connected to other GDI⁺ cells (meaning that they may be influenced by voltage drop as well), the maximum possible voltage drop is N*V_(TH), both for low digital level inputs and for high digital level inputs.

Following is a preferred embodiment of a methodology for connection between N GDI+ cells:

I. N GDI⁺ cells can be connected through all diffusion inputs (of both NMOS transistors and PMOS transistors) without buffer insertion, assuming that all inputs to gates are good digital levels (i.e. not affected by voltage drop).

II. If the maximum allowed drop in output voltage is K*V_(TH) and the GDI⁺ cells are connected through gate inputs, a buffer should be inserted every K GDI⁺ cells.

III. N generalized F1⁺ functions (for a prior art F₁ circuit see FIG. 2) connected through only the diffusion inputs and using only PMOS transistors, and assuming that all inputs to gates are good digital levels (i.e. not affected by voltage drop) yield a single V_(TH) voltage drop for a low digital signal (a high digital signal is not affected).

IV. N generalized F2⁺ functions (for a prior art F₂ circuit see FIG. 2) connected through only the diffusion inputs and using only NMOS transistors, and assuming that all inputs to gates are good digital levels (i.e. not affected by voltage drop) yield a single V_(TH) voltage drop for a high digital signal level (a low digital signal is not affected).

V. In consequence of III and IV, in addition to the regular property of the generalized GDI⁺ cell which permits connecting N GDI⁺ cells through the diffusion inputs without buffer insertion, the F1⁺ and F2⁺ functions can be connected through the gate inputs (see FIG. 59). According to this special property of F1⁺ and F2⁺ functions, N F1⁺ and F2⁺ cells can be connected through the diffusion inputs without buffer insertion and M F1⁺ and F2⁺ cells can be connected through the gates without buffer insertion, when each F1⁺ cell is followed by an F2⁺ cell. Generally, M can be any number (if not limited by short circuit currents).

VI. In consequence of III and IV, N F1⁺ cells (connected through diffusion inputs) can be followed by M F2⁺ cells (connected through diffusion inputs), where the connection between the F1⁺ and F2⁺ blocks is through the gate input of the first F2⁺ cell in the F2⁺ block.

VII. In consequence of III and IV, N F2⁺ cells (connected through diffusion inputs) can be followed by M F1⁺ cells (connected through diffusion inputs), where the connection between the F2⁺ and F1⁺ blocks is through gate input of the first F1⁺ cell in the F1⁺ block.

VIII. In consequence of I-III and VI-VII, three design methodologies may be considered:

-   -   i. Every logic function f can be implemented using a number of         GDI⁺ cells, where all the GDI⁺ cells are connected through the         diffusion inputs. Buffer insertion is required only to repair         input levels to the gate inputs.     -   ii. Every logic function f can be implemented using blocks of         F1⁺ and F2⁺ functions (both of which are whole logic families),         as described in VI and VII.     -   iii. Every logic function f can be implemented using combination         of i and ii.

These methodologies may be used as a basis for efficient synthesizer implementation, to achieve area efficient designs.

The following is a preferred embodiment of a methodology for the reduction of short-circuit current using high threshold buffers. The short-circuit current is caused by the threshold voltage drop at the gate input to the GDI⁺ cell. The current methodology is mostly suitable for advanced fabrication technologies (0.18 um and less), where at least two threshold voltages are available.

An example of a circuit which has a short-circuit current in steady state is shown in FIG. 60. FIG. 60 shows a generalized GDI⁺ ₁ cell followed by a buffer GDI⁺ ₂ for signal restoration. In the current case the input signal levels to the buffer gate range between V_(TH) to V_(DD)−V_(TH), where the V_(TH) level is the low digital level at the buffer input and V_(DD)−V_(TH) is the high digital level at the buffer input.

The short circuit current is caused in the current circuit because NMOS transistors (with a low digital level larger than 0V at the gate) and PMOS transistors (with a high digital level lower than V_(DD) at the gate) conduct current, according to the difference between the gate-source voltage V_(GS) and the threshold voltage V_(TH). In ideal case (in ideal CMOS technology), the |V_(GS)| of both the NMOS and PMOS transistors is equal to 0V, resulting in the operation of all transistors in the subthreshold region (|V_(GS)|<|V_(TH)|) at steady-state, thus causing only a leakage current. In the case shown in FIG. 60, the |V_(GS)| voltages of the NMOS and PMOS transistors can reach |V_(GS)|=|V_(TH)|, resulting in the operation of the transistors at the edge of the subthreshold region, thus causing a high current through these transistors at steady state. The path of the short circuit current is shown as I_(sc) in FIG. 60.

The short current can be eliminated by using different V_(TH) voltages for the different GDI⁺ cells. All GDI⁺ cells that are used as buffers (inverters) are given a high threshold voltage V_(TH-high). All the other GDI⁺ cells, which have good input voltage levels at their gates, should have a low threshold voltage V_(TH-low) as shown in FIG. 61. In this configuration, the maximum levels of the V_(GS) voltages of the NMOS transistors equals V_(Gs)=V_(TH-low) and the maximum level of V_(SG) voltages of the PMOS transistors equals V_(SG)=V_(TH-low). Thus the difference between V_(GS) and V_(TH) of the NMOS transistors is given by: (V_(TH-low)-V_(TH-high))=ΔV_(TH)<0. The same is true for the difference between the V_(SG) and the |V_(TH)| of the PMOS transistors. As a result, all transistors operate in the subthreshold region, eliminating short circuit current in steady state. The leakage current flowing in steady state decreases as V_(TH) increases.

The following is a preferred embodiment of a methodology for short circuit current reduction using multiple threshold F1⁺ and F2⁺ cells and high threshold buffers. The present methodology is suitable for all processes where at least three different threshold voltages are available. According to section V of the methodology detailed above, F1⁺ and F2⁺ cells can be connected through the gates without buffer insertion (when each F1⁺ cell is followed by an F2⁺ cell) resulting in only a single V_(TH) drop (given V_(TH) instead of ‘0’ at the F1⁺ output and V_(DD) instead of ‘1’ at the F2⁺ output). This V_(TH) drop causes short circuit currents in steady state. The steady state currents exist due to the fact that the V_(GS) voltages of the NMOS transistors of the F2⁺ gates equals V_(TH) instead of 0V when 0V is driven through the NMOS transistors to the F2⁺ outputs, and also due to the fact that the |V_(GS)| voltages of the PMOS transistors of the F1⁺ gates equals |V_(TH)|instead of 0V when V_(DD) is driven through the PMOS transistors to the F1⁺ outputs. In these cases the gate-source voltages of the NMOS transistors in the F1⁺ gates and the PMOS transistors in the F2⁺ gates reach

|V_(Gs)|=|V_(TH)|, resulting in the operation of the transistors at the edge of the subthreshold region, and causing high currents through these transistors in steady state.

The short current may be eliminated using different V_(TH) voltages for different F1⁺/F2⁺ cells in the following way: all F1⁺/F2⁺ cells having at their gate inputs signals that are outputs from other F2⁺/F1⁺ gates (and not from the buffers) should have threshold voltage larger than the threshold voltage of the previous F2⁺/F1⁺ stage. GDI⁺ cells that are used as buffers (inverters) should have the highest threshold voltage V_(TH-high). FIG. 62 shows an example of a circuit configured in accordance with the present methodology.

In FIG. 62, VTH_(GDI) ₊ ₁<VTH_(GDI) ₊ ₂<VTH_(GDI) ₊ ₃<V_(TH) _(high) . Thus the maximum levels of the V_(GS) voltage of the NMOS transistor in the GDI⁺ _(k) cell will be equal to V_(GS)=V_(TH) _((k−1)) and the maximum level of the V_(SG) voltage of the PMOS transistor in the GDI⁺ _(k) cell will be equal to V_(SG)=V_(TH) _((k−1)) . Thus the difference between V_(GS) of the NMOS transistors and the V_(TH) of those transistors is given by: (V_(TH(k−1))−V_(TH(k)))=ΔV_(TH)<0. The same is true for the difference between V_(SG) and |V_(TH)| of the PMOS transistors. As a result, all transistors operate in subthreshold region, eliminating short circuit current in steady state. Note, that the buffer can be inserted both after the F1⁺ cell (like in FIG. 62) and after the F2⁺ cell.

The following is a preferred embodiment of a methodology for short circuit current reduction using multiple threshold GDI⁺ cells and high V_(TH) buffers. The present methodology for short circuit current reduction is suitable for all processes where at least three different threshold voltages are available. This methodology is similar to the methodology presented above for F1⁺ and F2⁺ cells, where GDI⁺ cells are used instead of F1⁺ and F2⁺ cells.

When N GDI⁺ cells are connected through the gate inputs before a buffer, the maximum voltage drop at the buffer input (after k GDI⁺ cells) is V_(drop)=V_(TH) _(GDI) ₊ ₁ +V_(TH) _(GDI) ₊ ₂ +V_(TH) _(GDI) ₊ ₃ + . . . +V_(TH) _(GDI) ₊ _(k) , where V_(TH) _(n) is the threshold voltage of the GDI⁺ _(n) cell. The buffer compensates for the voltage drop, and restores signal levels. The voltage drop after each GDI⁺ cell causes short circuit currents in steady state, as was explained in sections I and II of the methodology detailed above. The short current may be eliminated using different threshold voltages for different the GDI⁺ cells in the following way. The threshold voltage V_(TH) _(GDI) ₊ _(k) of the GDI⁺ _(k) cell should be larger than the sum of the threshold voltages of all previous GDI cells, i.e. V_(TH) _(GDI) ₊ ₁ +V_(TH) _(GDI) ₊ ₂ + . . . +V_(TH) _(GDI) ₊ _((k−1)) <V_(TH) _(GDI+k) . This way the difference between V_(GS) and V_(TH) of the NMOS transistors in any GDI⁺ _(k) cell is given by: (V_(TH) _(GDI) ₊ ₁ +V_(TH) _(GDI) ₊ ₂ + . . . +V_(TH) _(GDI) ₊ _((k−1)) −V_(TH(k)))=ΔV_(TH)<0. The same is true for the difference between the V_(SG) and |V_(TH)| of the PMOS transistors. As a result, all transistors operate in subthreshold region, eliminating short circuit current in the steady state. Note that this rule should be applied to the buffer threshold voltage as well, resulting in V_(TH) _(GDI) ₊ ₁ +V_(TH) _(GDI) ₊ ₂ + . . . +V_(TH) _(GDI) ₊ _(k) <V_(TH) _(buffer) .

In the preferred embodiment, two or more GDI logic circuits are interconnected to form a higher order GDI logic circuit. Preferred embodiments of decoder circuits composed of interconnected GDI⁺ logic cells are given below

Reference is now made to FIG. 63, which is a circuit diagram of a GDI 1-to-2 Decoder, according to a preferred embodiment of the present invention. The GDI implementation, extends the previously proposed GDI 1-to-2 Decoder (shown in FIG. 12) to a GDI 1-to-2 Decoder, which is generalizable to an N-to-2^(N) Decoder (shown in FIG. 64). The difference between the GDI decoder to the previously proposed decoder is suitability for implementation in a standard CMOS technology. The preferred embodiment of the GDI⁺ decoder contains only two GDI⁺ cells. The 4-transistor structure can be used as an efficient basis for implementation of area-efficient decoders.

GDI⁺ 1-to-2 Decoder 6300 has one variable input 6310, two outputs 6320 and 6330, and two constant nodes (A and B). In the case of 1-to-2 Decoder implementation, node A is connected to ground and node B is connected to V_(DD). Table 14 shows the truth table of the GDI 1-to-2 Decoder.

TABLE 14 In Out1 Out2 ‘0’ ‘1’ ‘0’ ‘1’ ‘0’ ‘1’

The circuit configuration shown in FIG. 63 is generalizable to an N-to-2^(N) Decoder that requires only (2^(N)-2) 1-to-2 Decoders and a single inverter (for N>1).

Reference is now made to FIG. 64, which is a circuit diagram of a GDI 3-to-8 decoder, according to a preferred embodiment of the present invention. GDI⁺ 3-to-8 Decoder 6400 is implemented using six 1-to-2 Decoders and a single inverter. An N-to-2^(N) Decoder can be built in the same way by connecting the outputs from a given stage to the B inputs of the following stage, and connecting the In inputs of all the 1-to-2 decoders in the same stage. Table 15 gives the truth table of the 3-to-8 Decoder, shown in FIG. 63

TABLE 15 In1 In2 In3 Out1 Out2 Out3 Out4 Out5 Out6 Out7 Out8 ‘0’ ‘0’ ‘0’ ‘1’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘1’ ‘0’ ‘1’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘1’ ‘0’ ‘0’ ‘0’ ‘1’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘1’ ‘1’ ‘0’ ‘0’ ‘0’ ‘1’ ‘0’ ‘0’ ‘0’ ‘0’ ‘1’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘1’ ‘0’ ‘0’ ‘0’ ‘1’ ‘0’ ‘1’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘1’ ‘0’ ‘0’ ‘1’ ‘1’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘1’ ‘0’ ‘1’ ‘1’ ‘1’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘0’ ‘1’

GDI⁺ cells are also useful as repeaters (GCR) for area-efficient timing optimization. Interconnect optimization has become a major design consideration in state-of-the-art nanometer CMOS VLSI systems. The growth of die size together with decreased line width make wire delays more significant, compared with the active devices delay. Traditional design procedures have been developed assuming capacitive interconnect with negligible resistance. However, in resistive wires propagation delay increases quadratically with interconnect length, because both capacitance and resistance of the interconnect increase linearly with length. In order to handle resistive interconnect, post-routing design steps have been added, involving wire segmentation and repeater insertion, such that every segment resistance is significantly smaller than the on-resistance of the driver. FIG. 65 a illustrates a logic path driving a long interconnect wire, and FIG. 65 b shows repeater insertion on the long interconnect. Wire sizing and gate sizing have also been applied at this stage. Numerous studies explored various facets of the repeater insertion problem, adding inverters or buffers (double inverters) for amplifying logic signals on resistive wires between stages in a logic path. Besides speed optimization, this amplification reduces noise and restores logic levels. However, the usage of repeaters implies a significant cost in power and area, without contributing to the logical computation performed by the circuit. A recent study presented by J. A. Davis, R. Venkatesan, K. A. Bowman and J. D. Meindl, in “Gigascale integration (GSI) interconnect limits and n-tier multilevel interconnect architectural solutions,” Proc. of the International Workshop on System Level Interconnect Prediction (SLIP), San Diego, April 8-9 2000, pp. 147-148, contents of which are hereby incorporated by reference, claims that in the near future, up to 40% of chip area will be used by inverters operating as repeaters and buffers.

The use of numerous logically-redundant repeaters is considered wasteful, because the logic gates themselves may function as repeaters due to their amplifying nature. The main idea of the Logic Gates as Repeaters (LGR) concept is the distribution of logic gates over the interconnect; thus driving the partitioned interconnect without adding inverters to serve as repeaters, as shown in FIG. 65 c.

FIG. 66 shows a circuit configuration which uses GDI⁺ cells as repeaters, denoted herein the GCR technique. The GDI⁺ cells are distributed over the interconnect and serve as repeaters. The advantage of the GCR technique over a conventional LGR technique is the homogenous property of GDI⁺ cells. All cells have the same structure, and consist of only two transistors, and thus have a small size allowing easy insertion on the interconnect line. In addition, the “strong” logic property of GDI⁺ cells allows implementing very complicated functions.

Another advantage of the GDI⁺ technique, is that it enables Subthreshold leakage component reduction and leakage through transistors gates. Subthreshold leakage component reduction does not depend linearly on the number of devices (transistors) in the circuit. In GDI⁺ this component is significantly reduced because of the unique connections used for GDI⁺. Leakage through transistors gates is linearly depends on the number of devices (transistors) in the circuit and thus is significantly smaller in GDI⁺ comparing to other circuit design techniques.

The GDI⁺ approach is also effective for subthreshold leakage reduction. Subthreshold leakage is the current that flows between the source and the drain of a MOS transistor when gate voltage is below V_(TH). The subthreshold leakage is given by the following expression:

$\begin{matrix} {I_{sub} = {\frac{w_{eff}}{L_{eff}}\mu \sqrt{\frac{q\; ɛ_{si}N_{cheff}}{2\Phi_{s}}}v_{T}^{2}{\exp \left( \frac{V_{gs} - V_{th}}{{nv}_{T}} \right)}\left( {1 - {\exp \left( \frac{- V_{ds}}{v_{T}} \right)}} \right)}} & (56) \end{matrix}$

As can be seen, the subthreshold current is exponentially related to the gate source voltage and to the transistor threshold voltage. Thus, the subthreshold current can be decreased by gate source voltage reduction and/or by threshold voltage increase.

The following analysis is of subthreshold leakage for the GDI cell shown in FIG. 56. When the gate input of the GDI⁺ cell (A) is at a low digital level (i.e. ‘0’), the NMOS transistor is “off” and subthreshold leakage through the NMOS transistor can occur. Assume a good level for the digital low input to input A. This assumption corresponds to the buffer insertion methodology, where a buffer is inserted between two GDI cells connected through gate inputs.

Four cases can occur when the NMOS transistor is “off”:

-   -   1. A “good” low digital level at the N input (OV)—In this case         V_(GS)=0V and V_(BS)=0V (like in the case of a standard CMOS         inverter). Thus the subthreshold leakage current in similar to         the case of a standard CMOS.     -   2. A “bad” low digital level at the N input (>OV)—The         problematic input level may be caused by the V_(TH) voltage drop         in the previous GDI cell. In this case V_(GS)<0V and V_(BS)<0V.         Thus the subthreshold leakage current is reduced for two         reasons: the gate source voltage is reduced and the threshold         voltage is increased (V_(BS)<0V).     -   3. A “good” high digital level at the N input (V_(DD)):         -   a. Output=‘1’—In this case V_(GS)<0V (V_(GS)=−V_(DD)) and             V_(BS)<0V (V_(BS)=−V_(DD)). Thus the subthreshold leakage             current is eliminated for two reasons: gate source voltage             is reduced and threshold voltage is increased (V_(BS)<0V).         -   b. Output=‘0’—In this case the output GDI cell serves as the             source of the NMOS transistor and the N node serves as the             drain. A ‘0’ output signal is driven by the PMOS transistor,             so that the output voltage level is >=V_(TH). In this case             V_(GS)<0V and V_(BS)<OV. Thus the subthreshold leakage             current is reduced due to reasons: the gate source voltage             is reduced and the threshold voltage is increased             (V_(BS)<0V).     -   4. A “bad” high digital level at the N input (<V_(DD)): The         problematic input level may be caused by the V_(TH) voltage drop         in the previous GDI cell.

a. Output=‘1’−V_(GS)<0V and V_(BS)<0V. Thus the subthreshold leakage current is significantly reduced or eliminated for two reasons: the gate source voltage is reduced and the threshold voltage is increased (V_(BS)<0V).

-   -   -   b. Output=‘0’—In this case the output GDI cell serves as the             source of the NMOS transistor and the N node serves as the             drain. A ‘0’ output signal is driven by the PMOS transistor,             so that the output voltage level is >=V_(TH). In this case             V_(GS)<0V and V_(BS)<0V. Thus the subthreshold leakage             current is reduced due to reasons: A ‘0’ output signal is             driven by the gate source voltage is reduced and A ‘0’             output signal is driven by the threshold voltage is             increased (V_(BS)<OV).

The same analysis can be applied to the PMOS transistor in the GDI cell to show a subthreshold current reduction in most cases, like in NMOS.

Implementation of logic functions in Silicon-on-Insulator (SOI)/Silicon-on-Sapphire (SOS) technologies allows significant reduction of wires, used for interconnect. In these technologies, the floating bulk transistors are usually used for logical circuits implementations (both for GDI and for other existing design methodologies). Floating bulk transistors do not require connections of the V_(DD) and GND wires to the transistors bulks. Thus, when a logic circuit is implemented using GDI⁺ cells with SOI or SOS transistors, V_(DD) and GND interconnect wires are not required (since the GDI⁺ cell requires V_(DD) and GND only to supply the bulks). This is in contrast to most prior-art design methodologies which would still need V_(DD) and GND to supply the circuits.

All embodiments of the abovedescribed previously proposed GDI logic circuits and methods may be expanded to the GDI⁺ technology by substituting a respective GDI⁺ logic cell for each GDI cell. Preferred embodiments for the GDI⁺ technology include but are not limited to: a complementary logic circuit having a first logic block consisting of a p-type transistor network and a second logic block consisting of an n-type transistor network, a logic circuit consisting of interconnected GDI⁺ cells, a methodology for designing a logic circuit constructed from interconnected GDI⁺ cells, and a method for providing a logic circuit constructed from interconnected GDI⁺ cells.

The GDI⁺ logic technique described above provides a low-power, area efficient alternative to existing logic circuit techniques, which is implementable in all current CMOS transistor technologies. GDI⁺ is suitable for design of fast, low power circuits, using reduced number of transistors, while improving logic level swing and static power characteristics, and allowing simple top-down design by using a small cell library. GDI⁺ is suitable for implementation of a wide spectrum of logic circuits, using a variety of transistor technologies. GDI⁺ logic circuit performance is testable, so that automatic design and verification tools for GDI⁺ circuits can be readily developed. Accurate simulations of designed logic circuits can be performed prior to manufacture. GDI⁺ logic and logic circuit design methodology are therefore a promising new approach to logic circuit design.

It is expected that during the life of this patent many relevant logic circuits, logic gates, logic cells, transistors, and transistor technologies will be developed and the scope of the terms logic circuit, logic gate, logic cell, transistor, and transistor technology is intended to include all such new technologies a priori.

As used herein the term “about” refers to ±10%.

It is appreciated that certain features of the invention, which are, for clarity, described in the context of separate embodiments, may also be provided in combination in a single embodiment. Conversely, various features of the invention, which are, for brevity, described in the context of a single embodiment, may also be provided separately or in any suitable subcombination.

Although the invention has been described in conjunction with specific embodiments thereof, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art. Accordingly, it is intended to embrace all such alternatives, modifications and variations that fall within the spirit and broad scope of the appended claims. All publications, patents and patent applications mentioned in this specification are herein incorporated in their entirety by reference into the specification, to the same extent as if each individual publication, patent or patent application was specifically and individually indicated to be incorporated herein by reference. In addition, citation or identification of any reference in this application shall not be construed as an admission that such reference is available as prior art to the present invention. 

1. A complementary logic cell, comprising: a first logic input; a second logic input; a first dedicated logic terminal; a second dedicated logic terminal; a high-voltage terminal configured for connection to a high constant voltage; a low-voltage terminal configured for connection to a low constant voltage; a p-type transistor, having an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection; and an n-type transistor, having an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection; said first dedicated logic terminal being connected to said outer diffusion connection of said p-type transistor, said second dedicated logic terminal being connected to said outer diffusion connection of said n-type transistor, said inner diffusion connection of said p-type transistor and said inner diffusion connection of said n-type transistor being connected to form a common diffusion logic terminal, said high-voltage terminal being connected to said bulk connection of said p-type transistor, and said low-voltage terminal being connected to said bulk connection of said n-type transistor.
 2. A complementary logic circuit according to claim 1, wherein said first and second logic inputs are connected to form a first common logic input.
 3. A complementary logic circuit, comprising: a first logic input; a second logic input; a first dedicated logic terminal; a second dedicated logic terminal; a high-voltage terminal configured for connection to a high constant voltage; a low-voltage terminal configured for connection to a low constant voltage; a first logic block comprising: a network of p-type transistors for implementing a predetermined logic function, said network having an outer diffusion connection, a first network gate connection, an inner diffusion connection, and a bulk connection, said outer diffusion connection of said p-type transistor network being connected to said first dedicated logic terminal, said first network gate connection of said p-type transistor network being connected to said first logic input, and said bulk connection of said p-type transistor network being connected to said high-voltage terminal; and a second logic block comprising: a network of n-type transistors implementing logic function complementary to said predetermined logic function, said network having an outer diffusion connection, a first network gate connection, an inner diffusion connection, and a bulk connection, said outer diffusion connection of said n-type transistor network being connected to said second dedicated logic terminal, said first network gate connection of said n-type transistor network being connected to said second logic input, and said bulk connection of said n-type transistor network being connected to said low-voltage terminal; said inner diffusion connections of said p-type network and of said n-type network being connected to form a common diffusion logic terminal.
 4. A complementary logic circuit according to claim 3, wherein said first and second logic inputs are connected to form a first common logic input.
 5. A complementary logic circuit according to claim 3, wherein each of said logic terminals is separately configurable to serve as a logic input.
 6. A complementary logic circuit according to claim 3, wherein each of said logic terminals is separately configurable to serve as a logic output.
 7. A complementary logic circuit according to claim 3, further comprising a third logic input connected to a second network gate connection of said p-type transistor network.
 8. A complementary logic circuit according to claim 3, further comprising a fourth logic input connected to a second network gate connection of said n-type transistor network.
 9. A complementary logic circuit according to claim 7, further comprising a fourth logic input connected to a second network gate connection of said n-type transistor network.
 10. A complementary logic circuit according to claim 9, said third and fourth logic inputs being connected to form a second common logic input.
 11. A complementary logic circuit according to claim 3, wherein said p-type transistor network comprises a single p-type transistor.
 12. A complementary logic circuit according to claim 3, wherein said n-type transistor network comprises a single n-type transistor.
 13. A complementary logic circuit according to claim 3, wherein said network of p-type transistors comprises one of a group of networks comprising: a network of p-type field effect transistors (FET), a network of p-type p-well complementary metal-oxide semiconductor (CMOS) transistors, a network of p-type n-well complementary metal-oxide semiconductor (CMOS) transistors, a network of p-type twin-well complementary metal-oxide semiconductor (CMOS) transistors, a network of p-type silicon on insulator (SOI) transistors, and a network of p-type silicon on sapphire (SOS) transistors.
 14. A complementary logic circuit according to claim 3, wherein said network of n-type transistors comprises one of a group of networks comprising: a network of n-type FETs, a network of n-type p-well CMOS transistors, a network of n-type n-well CMOS transistors, a network of n-type twin-well CMOS transistors, a network of n-type SOI transistors, and a network of n-type SOS transistors.
 15. A logic circuit, comprising interconnected logic elements, said logic elements comprising: a first logic input; a second logic input; a first dedicated logic terminal; a second dedicated logic terminal; a high-voltage terminal configured for connection to a high constant voltage; a low-voltage terminal configured for connection to a low constant voltage; a p-type transistor, having an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection; and an n-type transistor, having an outer diffusion connection, a gate connection, an inner diffusion connection, and a bulk connection; said first logic input being connected to said gate connection of said p-type transistor, said second logic input being connected to said gate connection of said n-type transistor, said first dedicated logic terminal being connected to said outer diffusion connection of said p-type transistor, said second dedicated logic terminal being connected to said outer diffusion connection of said n-type transistor, said inner diffusion connection of said p-type transistor and said inner diffusion connection of said n-type transistor being connected to form a common diffusion logic terminal, said high-voltage terminal being connected to said bulk connection of said p-type transistor, and said low-voltage terminal being connected to said bulk connection of said n-type transistor.
 16. A logic circuit according to claim 15, wherein for each of logic elements said first and second logic inputs are connected to form a common logic input.
 17. A logic circuit according to claim 15, wherein for each of logic elements each of said logic terminals is separately configurable to serve as a logic input.
 18. A logic circuit according to claim 15, wherein for each of logic elements each of said logic terminals is separately configurable to serve as a logic output.
 19. A logic circuit according to claim 15, wherein a type of said p-type transistors comprises one of a group of transistor types comprising: p-type FET transistors, p-type p-well CMOS transistors, p-type n-well CMOS transistors, p-type twin-well CMOS transistors, p-type SOI transistors, and p-type SOS transistors.
 20. A logic circuit according to claim 15, wherein said a type of n-type transistors comprises one of a group of transistor types comprising: n-type FET transistors, n-type p-well CMOS transistors, n-type n-well CMOS transistors, n-type twin-well CMOS transistors, n-type SOI transistors, and n-type SOS transistors.
 21. A logic circuit, comprising interconnected logic elements, said logic elements comprising: a first logic input; a second logic input; a first dedicated logic terminal; a second dedicated logic terminal; a high-voltage terminal configured for connection to a high constant voltage; a low-voltage terminal configured for connection to a low constant voltage; a first logic block comprising: a network of p-type transistors for implementing a predetermined logic function, said network having an outer diffusion connection, a first network gate connection, an inner diffusion connection, and a bulk connection, said outer diffusion connection of said p-type transistor network being connected to said first dedicated logic terminal, said first network gate connection of said p-type transistor network being connected to said first logic input, and said bulk connection of said p-type transistor network being connected to said high-voltage terminal; and a second logic block comprising: a network of n-type transistors implementing logic function complementary to said predetermined logic function, said network having an outer diffusion connection, a first network gate connection, an inner diffusion connection, and a bulk connection, said outer diffusion connection of said n-type transistor network being connected to said second dedicated logic terminal, said first network gate connection of said n-type transistor network being connected to said second logic input, and said bulk connection of said n-type transistor network being connected to said low-voltage terminal; said inner diffusion connections of said p-type network and of said n-type network being connected to form a common diffusion logic terminal.
 22. A logic circuit according to claim 21, wherein for each of said logic elements said first and second logic inputs are connected to form a first common logic input.
 23. A logic circuit according to claim 21, wherein for each of said logic elements each of said logic terminals is separately configurable to serve as a logic input.
 24. A logic circuit according to claim 21, wherein for each of said logic elements each of said logic terminals is separately configurable to serve as a logic output.
 25. A logic circuit according to claim 21, further comprising a third logic input connected to a second network gate connection of said p-type transistor network.
 26. A logic circuit according to claim 21, further comprising a fourth logic input connected to a second network gate connection of said n-type transistor network.
 27. A complementary logic circuit according to claim 25, further comprising a fourth logic input connected to a second network gate connection of said n-type transistor network.
 28. A complementary logic circuit according to claim 27, said third and fourth logic inputs being connected to form a second common logic input.
 29. A logic circuit according to claim 21, wherein said p-type transistor network comprises a single p-type transistor.
 30. A logic circuit according to claim 21, wherein said n-type transistor network comprises a single n-type transistor.
 31. A logic circuit according to claim 21, wherein said network of p-type transistors comprises one of a group of networks comprising: a network of p-type field effect transistors (FET), a network of p-type p-well complementary metal-oxide semiconductor (CMOS) transistors, a network of p-type n-well complementary metal-oxide semiconductor (CMOS) transistors, a network of p-type twin-well complementary metal-oxide semiconductor (CMOS) transistors, a network of p-type silicon on insulator (SOI) transistors, and a network of p-type silicon on sapphire (SOS) transistors.
 32. A logic circuit according to claim 21, wherein said network of n-type transistors comprises one of a group of networks comprising: a network of n-type FETs, a network of n-type p-well CMOS transistors, a network of n-type n-well CMOS transistors, a network of n-type twin-well CMOS transistors, a network of n-type SOI transistors, and a network of n-type SOS transistors. 